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    Semiconductor memory device with high permeability composite films to reduce noise in high speed interconnects
    1.
    发明授权
    Semiconductor memory device with high permeability composite films to reduce noise in high speed interconnects 失效
    具有高磁导率复合膜的半导体存储器件，以降低高速互连中的噪声

    公开(公告)号：US07391637B2

    公开(公告)日：2008-06-24

    申请号：US10910399

    申请日：2004-08-03

    申请人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    IPC分类号： G11C5/08 ,  H01L29/41

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the number of high permeability metal lines. A second layer of insulating material is formed on the transmission lines and the high permeability metal lines. The structure for transmission line operation includes a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 存储器件具有用于改善集成电路上的传输线操作的结构。 用于传输线操作的结构包括在衬底上的第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在绝缘材料的第一层上并且与多个高导磁率金属线之间并且平行。 在传输线和高磁导率金属线上形成第二层绝缘材料。 用于传输线操作的结构包括在第二绝缘材料层上的第二层导电材料。

    High permeability composite films to reduce noise in high speed interconnects
    2.
    发明授权
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US07327016B2

    公开(公告)日：2008-02-05

    申请号：US10910676

    申请日：2004-08-03

    申请人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    IPC分类号： H01L39/00

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An electronic system is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the high permeability metal lines. A second layer of insulating material is formed on the transmission line and the pair of high permeability metal lines. The structure for transmission line operation includes a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 电子系统具有用于改善集成电路上的传输线操作的结构。 用于传输线操作的结构包括在衬底上的第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在第一绝缘材料层上并且与高磁导率金属线平行。 在传输线和一对高导磁性金属线上形成第二层绝缘材料。 用于传输线操作的结构包括在第二绝缘材料层上的第二层导电材料。

    High permeability composite films to reduce noise in high speed interconnects
    4.
    发明授权
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US06787888B2

    公开(公告)日：2004-09-07

    申请号：US10371009

    申请日：2003-02-20

    申请人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    IPC分类号： H01L2906

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the number of high permeability metal lines. A second layer of insulating material is formed on the transmission lines and the high permeability metal lines. The structure for transmission line operation includes a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 存储器件具有用于改善集成电路上的传输线操作的结构。 用于传输线操作的结构包括在衬底上的第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在绝缘材料的第一层上并且与多个高导磁率金属线之间并且平行。 在传输线和高磁导率金属线上形成第二层绝缘材料。 用于传输线操作的结构包括在第二绝缘材料层上的第二层导电材料。

    High permeability layered films to reduce noise in high speed interconnects
    5.
    发明授权
    High permeability layered films to reduce noise in high speed interconnects 有权
    高磁导率分层膜，以降低高速互连中的噪声

    公开(公告)号：US07235457B2

    公开(公告)日：2007-06-26

    申请号：US10099217

    申请日：2002-03-13

    申请人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    IPC分类号： H01L21/76 ,  H01L21/4763 ,  H01L21/44

    CPC分类号： G11C5/063 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/53209 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of layered high permeability shielding lines are formed on the first layer of insulating material. The pair of layered high permeability shielding lines include layered permalloy and/or Ni45Fe55 films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of layered high permeability shielding lines.

    摘要翻译： 本发明提供了一种用于改进集成电路上的传输线操作的结构和方法。 本发明的一种方法包括在集成电路中形成传输线。 该方法包括在衬底上形成第一导电材料层。 第一层绝缘材料形成在导电材料的第一层上。 在第一层绝缘材料上形成一层分层的高磁导率屏蔽线。 一对分层的高磁导率屏蔽线包括层状坡莫合金和/或Ni <！ - SIPO

    High permeability composite films to reduce noise in high speed interconnects
    6.
    发明授权
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US06844256B2

    公开(公告)日：2005-01-18

    申请号：US10370752

    申请日：2003-02-20

    申请人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    IPC分类号： G11C7/18 ,  H01L23/522 ,  H01L21/4763

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method for forming integrated circuit lines provides a structure for improved operation on integrated circuits. A method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of integrated circuit lines is formed on the first layer of insulating material. A number of conductive lines is formed on the first layer of insulating material between and parallel with the number of intergrated circuit lines, where each conductive line includes a composite ferrite film. A second layer of insulating material is formed on the integrated circuit lines and the conductive lines. The method includes forming a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 一种用于形成集成电路线的方法提供了一种用于集成电路的改进操作的结构。 一种方法包括在衬底上形成第一导电材料层。 第一层绝缘材料形成在导电材料的第一层上。 在第一层绝缘材料上形成多个集成电路线。 在第一层绝缘材料上形成多个导线，并且与多个集成电路线并联，其中每个导线包括复合铁氧体膜。 在集成电路线路和导线上形成第二层绝缘材料。 该方法包括在第二绝缘材料层上形成第二导电材料层。

    High permeability composite films to reduce noise in high speed interconnects
    8.
    发明授权
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US07335968B2

    公开(公告)日：2008-02-26

    申请号：US10914331

    申请日：2004-08-09

    申请人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    IPC分类号： H01L29/06

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A transmission line circuit provides a structure for improved transmission line operation on integrated circuits. The transmission line circuit includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the number of high permeability metal lines. A second layer of insulating material is formed on the transmission lines and the high permeability metal lines. The transmission line circuit includes forming a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 传输线电路提供用于改进集成电路上的传输线操作的结构。 传输线电路在衬底上包括第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在绝缘材料的第一层上并且与多个高导磁率金属线之间并且平行。 在传输线和高磁导率金属线上形成第二层绝缘材料。 传输线电路包括在第二绝缘材料层上形成第二层导电材料。

    High permeability composite films to reduce noise in high speed interconnects
    10.
    发明授权
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US06833317B2

    公开(公告)日：2004-12-21

    申请号：US10371010

    申请日：2003-02-20

    申请人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Y. Ahn ,  Salman Akram

    IPC分类号： H01L214763

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of high permeability metal lines are formed on the first layer of insulating material. The pair of high permeability metal lines include composite hexaferrite films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of high permeability metal lines. A second layer of insulating material is formed on the transmission line and the pair of high permeability metal lines. And, the method includes forming a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 本发明提供了一种用于改进集成电路上的传输线操作的结构和方法。 本发明的一种方法包括在集成电路中形成传输线。 该方法包括在衬底上形成第一导电材料层。 第一层绝缘材料形成在导电材料的第一层上。 在第一层绝缘材料上形成一对高磁导率金属线。 一对高磁导率金属线包括复合六铁氧体膜。 传输线形成在第一绝缘材料层上并且与一对高磁导率金属线平行。 在传输线和一对高导磁性金属线上形成第二层绝缘材料。 而且，该方法包括在第二绝缘材料层上形成第二导电材料层。