发明授权
- 专利标题： Magnetic sensor and method of producing the same
- 专利标题（中）： 磁传感器及其制造方法
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申请号： US10052525申请日： 2002-01-23
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公开(公告)号： US06904669B2公开(公告)日： 2005-06-14
- 发明人: Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
- 申请人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
- 申请人地址： JP Shizuoka-ken
- 专利权人： Yamaha Corporation
- 当前专利权人： Yamaha Corporation
- 当前专利权人地址： JP Shizuoka-ken
- 代理机构： Dickstein, Shapiro, Morin & Oshinsky, LLP.
- 优先权： JP2001-15805 20010124; JP2001-281703 20010917
- 主分类号： G01R33/09
- IPC分类号： G01R33/09 ; H01F10/14 ; H01F41/18 ; H01F41/30 ; H01L43/08 ; H01L43/12 ; H01F10/08 ; H01L21/00
摘要：
On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
公开/授权文献
- US20020142490A1 Magnetic sensor and method of producing the same 公开/授权日：2002-10-03
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