公开(公告)号：US07589528B2

公开(公告)日：2009-09-15

申请号：US11682841

申请日：2007-03-06

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/02

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。

公开(公告)号：US20070182407A1

公开(公告)日：2007-08-09

申请号：US11682841

申请日：2007-03-06

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R15/18 ,  G01R33/02

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向 。

公开(公告)号：US20060268469A1

公开(公告)日：2006-11-30

申请号：US11497378

申请日：2006-08-02

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

摘要翻译： 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US20060268468A1

公开(公告)日：2006-11-30

申请号：US11497352

申请日：2006-08-02

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

公开(公告)号：US20050054120A1

公开(公告)日：2005-03-10

申请号：US10891451

申请日：2004-07-15

申请人： Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： H01L43/08 ,  G01R33/09 ,  H01L21/00

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01R33/093

摘要： A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is connected with both ends of the magnetoresistive element and the upper surface thereof is entirely covered with the lower surface of the magnetoresistive element at both ends. Herein, distances between the side surfaces of the both ends of the magnetoresistive element and the side surfaces of the bias magnetic layer viewed from the protective film do not exceed 3 μm. In addition, a part of the bias magnetic layer can be covered with both ends of the magnetoresistive element, and an intermediate layer is arranged in relation to the magnetoresistive element, bias magnetic layer, and protective film so as to entirely cover the upper surface of the bias magnetic layer.

摘要翻译： 磁传感器包括基板，自旋阀型磁阻元件，偏磁层（或永磁体膜）和保护膜，其中偏磁层与磁阻元件的两端连接， 其表面完全被两端的磁阻元件的下表面覆盖。 这里，磁阻元件的两端的侧面与从保护膜观察的偏磁层的侧面之间的距离不超过3μm。 此外，偏磁层的一部分可以被磁阻元件的两端覆盖，并且相对于磁阻元件，偏磁层和保护膜布置中间层，以便完全覆盖磁阻元件的上表面 偏磁层。

公开(公告)号：US07633132B2

公开(公告)日：2009-12-15

申请号：US11704366

申请日：2007-02-09

申请人： Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01R33/093

摘要： A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is connected with both ends of the magnetoresistive element and the upper surface thereof is entirely covered with the lower surface of the magnetoresistive element at both ends. Herein, distances between the side surfaces of the both ends of the magnetoresistive element and the side surfaces of the bias magnetic layer viewed from the protective film do not exceed 3 μm. In addition, a part of the bias magnetic layer can be covered with both ends of the magnetoresistive element, and an intermediate layer is arranged in relation to the magnetoresistive element, bias magnetic layer, and protective film so as to entirely cover the upper surface of the bias magnetic layer.

摘要翻译： 磁传感器包括基板，自旋阀型磁阻元件，偏磁层（或永磁体膜）和保护膜，其中偏磁层与磁阻元件的两端连接， 其表面完全被两端的磁阻元件的下表面覆盖。 这里，磁阻元件的两端的侧面与从保护膜观察的偏磁层的侧面之间的距离不超过3μm。 此外，偏磁层的一部分可以被磁阻元件的两端覆盖，并且相对于磁阻元件，偏磁层和保护膜布置中间层，以便完全覆盖磁阻元件的上表面 偏磁层。

公开(公告)号：US20080297954A1

公开(公告)日：2008-12-04

申请号：US12105923

申请日：2008-04-18

申请人： Kokichi Aiso

发明人： Kokichi Aiso

IPC分类号： G11B5/33 ,  B32B37/14

CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L43/12

摘要： A magnetic sensor includes a plurality of giant magnetoresistive elements, each of which includes a free layer, a conductive layer, and a pin layer sequentially laminated on a substrate, wherein the pin layer formed by sequentially laminating a first magnetic layer, an Ru layer, a second magnetic layer, and an antiferromagnetic layer is subjected to magnetization heat treatment so as to fix the magnetization direction thereof. The first and second magnetic layers differ from each other in thickness and magnetic moment thereof, and the thickness of the Ru layer ranges from 4 Å to 10 Å. The magnetization heat treatment is performed so as to maintain an anti-parallel state between the first and second magnetic layers. In order to detect magnetic fields in three-axial directions, one giant magnetoresistive element is formed using a planar surface, and the other giant magnetoresistive elements are formed using respective slopes on the substrate.

摘要翻译： 磁传感器包括多个巨磁电阻元件，每个巨磁阻元件包括依次层压在基板上的自由层，导电层和引脚层，其中通过依次层叠第一磁性层，Ru层， 第二磁性层和反铁磁性层进行磁化热处理，以固定其磁化方向。 第一和第二磁性层的厚度和磁矩彼此不同，并且Ru层的厚度在4埃到10埃之间。 进行磁化热处理，以保持第一和第二磁性层之间的反平行状态。 为了检测三轴方向的磁场，使用平面来形成一个巨磁电阻元件，其它的巨磁电阻元件使用基板上的各个斜面形成。

公开(公告)号：US20080160184A1

公开(公告)日：2008-07-03

申请号：US12043057

申请日：2008-03-05

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： B05D5/12 ,  H01F1/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

摘要翻译： 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US20070210792A1

公开(公告)日：2007-09-13

申请号：US11704366

申请日：2007-02-09

申请人： Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/02

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01R33/093

摘要： A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is connected with both ends of the magnetoresistive element and the upper surface thereof is entirely covered with the lower surface of the magnetoresistive element at both ends. Herein, distances between the side surfaces of the both ends of the magnetoresistive element and the side surfaces of the bias magnetic layer viewed from the protective film do not exceed 3 μm. In addition, a part of the bias magnetic layer can be covered with both ends of the magnetoresistive element, and an intermediate layer is arranged in relation to the magnetoresistive element, bias magnetic layer, and protective film so as to entirely cover the upper surface of the bias magnetic layer.

摘要翻译： 磁传感器包括基板，自旋阀型磁阻元件，偏磁层（或永磁体膜）和保护膜，其中偏磁层与磁阻元件的两端连接， 其表面完全被两端的磁阻元件的下表面覆盖。 这里，磁阻元件的两端的侧面与从保护膜观察的偏磁层的侧面之间的距离不超过3μm。 此外，偏磁层的一部分可以被磁阻元件的两端覆盖，并且相对于磁阻元件，偏磁层和保护膜布置中间层，以便完全覆盖磁阻元件的上表面 偏磁层。

公开(公告)号：US07187167B2

公开(公告)日：2007-03-06

申请号：US10846554

申请日：2004-05-17

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/09

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。