公开(公告)号：US20070182407A1

公开(公告)日：2007-08-09

申请号：US11682841

申请日：2007-03-06

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R15/18 ,  G01R33/02

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向 。

公开(公告)号：US07589528B2

公开(公告)日：2009-09-15

申请号：US11682841

申请日：2007-03-06

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/02

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。

公开(公告)号：US07187167B2

公开(公告)日：2007-03-06

申请号：US10846554

申请日：2004-05-17

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/09

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。

公开(公告)号：US06904669B2

公开(公告)日：2005-06-14

申请号：US10052525

申请日：2002-01-23

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/09 ,  H01F10/14 ,  H01F41/18 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/08 ,  H01L21/00

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向 。

公开(公告)号：US20120268113A1

公开(公告)日：2012-10-25

申请号：US13517526

申请日：2012-06-13

申请人： Hideki Sato ,  Masayoshi Omura ,  Hiroshi Naito ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Chihiro Osuga

发明人： Hideki Sato ,  Masayoshi Omura ,  Hiroshi Naito ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Chihiro Osuga

IPC分类号： G01R33/09 ,  G01R3/00

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  Y10T29/49002 ,  Y10T29/4902

摘要： In a three-axis magnetic sensor, a plurality of magnetoresistive effect element bars are connected in series by means of bias magnets formed on a flat surface parallel to the flat surface of the substrate to constitute magnetoresistive effect elements. The sensitivity direction of magnetization is a direction perpendicular to the longitudinal direction of each of the magnetoresistive effect element bars. Magnetoresistive effect elements forming X-axis and Y-axis sensors have magnetization directions that are orthogonal to each other. Magnetoresistive effect elements of the Z-axis sensor are formed on a tilted surface substrate in such a way that the magnetization direction is inside the tilted surface. The sensitivity direction of the Z-axis sensor is perpendicular to the longitudinal direction of the magnetoresistive effect element bar.

摘要翻译： 在三轴磁传感器中，多个磁阻效应元件棒通过形成在平行于基板的平坦表面的平坦表面上的偏置磁铁串联连接，以构成磁阻效应元件。 磁化的灵敏度方向是垂直于每个磁阻效应元件棒的纵向的方向。 形成X轴和Y轴传感器的磁阻效应元件具有彼此正交的磁化方向。 Z轴传感器的磁阻效应元件形成在倾斜表面基板上，使得磁化方向在倾斜表面内。 Z轴传感器的灵敏度方向垂直于磁阻效应元件棒的纵向方向。

公开(公告)号：US20090027048A1

公开(公告)日：2009-01-29

申请号：US11908549

申请日：2006-03-17

申请人： Hideki Sato ,  Masayoshi Omura ,  Hiroshi Naito ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Chihiro Osuga

发明人： Hideki Sato ,  Masayoshi Omura ,  Hiroshi Naito ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Chihiro Osuga

IPC分类号： G01R33/09 ,  G01R3/00

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  Y10T29/49002 ,  Y10T29/4902

摘要： In the three-axis magnetic sensor of the present invention, a plurality of magnetoresistive effect element bars are connected in series by means of bias magnets to constitute magnetoresistive effect elements, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed on a flat surface parallel to the flat surface of the substrate. The sensitivity direction of magnetization is a direction vertical to the longitudinal direction of each of the magnetoresistive effect element bars, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed in such a way that the magnetization directions are orthogonal to each other. Further, magnetoresistive effect elements of the Z-axis sensor are formed on a tilted surface of the projection projected from the flat surface of the substrate in such a way that the magnetization direction is inside the tilted surface. The Z-axis sensor is provided in such a way that the sensitivity direction is vertical to the longitudinal direction of the magnetoresistive effect element bar.

摘要翻译： 在本发明的三轴磁传感器中，多个磁阻效应元件棒通过偏置磁铁串联连接，构成磁阻效应元件，X轴传感器和Y轴传感器的磁阻效应元件， 轴传感器形成在平行于基板的平坦表面的平坦表面上。 磁化的灵敏度方向是垂直于每个磁阻效应元件棒的纵向的方向，并且X轴传感器和Y轴传感器的磁阻效应元件以这样的方式形成，使得磁化方向 彼此正交。 此外，Z轴传感器的磁阻效应元件形成在从基板的平坦表面突出的突起的倾斜表面上，使得磁化方向在倾斜表面内。 Z轴传感器以灵敏度方向垂直于磁阻效应元件棒的纵向的方式设置。

公开(公告)号：US07023310B2

公开(公告)日：2006-04-04

申请号：US11076069

申请日：2005-03-10

申请人： Toshiyuki Oohashi ,  Kokichi Aiso

发明人： Toshiyuki Oohashi ,  Kokichi Aiso

IPC分类号： H01H7/02 ,  G11B5/127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  Y10T29/49002 ,  Y10T29/49021

摘要： A magnetic sensor includes eight SAF-type GMR elements. Four of the GMR elements detect a magnetic field in the direction of the X-axis and are bridge-connected to thereby constitute an X-axis magnetic sensor. The other four GMR elements detect a magnetic field in the direction of the Y-axis and are bridge-connected to thereby constitute a Y-axis magnetic sensor. The magnetization of a pinned layer of each of the GMR elements is pinned in a fixed direction by means of a magnetic field that a permanent bar magnet inserted into a square portion of a yoke of a magnet array generates in the vicinity of a rectangular portion of the yoke. A magnetic field generated in the vicinity of a certain rectangular portion of the yoke differs in direction by 90 degrees from a magnetic field generated in the vicinity of a rectangular portion adjacent to the former rectangular portion.

摘要翻译： 磁传感器包括八个SAF型GMR元件。 四个GMR元件在X轴的方向上检测磁场并被桥接，从而构成X轴磁性传感器。 另外四个GMR元件在Y轴方向上检测磁场并桥接，从而构成Y轴磁传感器。 每个GMR元件的被钉扎层的磁化通过磁场固定在固定方向上，该磁场插入到磁体阵列的磁轭的方形部分中的永久磁棒磁体在 轭。 在轭的某个矩形部分附近产生的磁场在与前一个矩形部分相邻的矩形部分附近产生的磁场方向相差90度。

公开(公告)号：US20050200449A1

公开(公告)日：2005-09-15

申请号：US11076069

申请日：2005-03-10

申请人： Toshiyuki Oohashi ,  Kokichi Aiso

发明人： Toshiyuki Oohashi ,  Kokichi Aiso

IPC分类号： H01L43/02 ,  G01R33/09 ,  H01L43/00 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  G01R33/093 ,  Y10T29/49002 ,  Y10T29/49021

摘要： A magnetic sensor includes eight SAF-type GMR elements. Four of the GMR elements detect a magnetic field in the direction of the X-axis and are bridge-connected to thereby constitute an X-axis magnetic sensor. The other four GMR elements detect a magnetic field in the direction of the Y-axis and are bridge-connected to thereby constitute a Y-axis magnetic sensor. The magnetization of a pinned layer of each of the GMR elements is pinned in a fixed direction by means of a magnetic field that a permanent bar magnet inserted into a square portion of a yoke of a magnet array generates in the vicinity of a rectangular portion of the yoke. A magnetic field generated in the vicinity of a certain rectangular portion of the yoke differs in direction by 90 degrees from a magnetic field generated in the vicinity of a rectangular portion adjacent to the former rectangular portion.

摘要翻译： 磁传感器包括八个SAF型GMR元件。 四个GMR元件在X轴的方向上检测磁场并被桥接，从而构成X轴磁性传感器。 另外四个GMR元件在Y轴方向上检测磁场并桥接，从而构成Y轴磁传感器。 每个GMR元件的被钉扎层的磁化通过磁场固定在固定方向上，该磁场插入到磁体阵列的磁轭的方形部分中的永久磁棒磁体在 轭。 在轭的某个矩形部分附近产生的磁场在与前一个矩形部分相邻的矩形部分附近产生的磁场方向相差90度。

公开(公告)号：US07075395B2

公开(公告)日：2006-07-11

申请号：US10689041

申请日：2003-10-21

申请人： Toshiyuki Oohashi ,  Yukio Wakui

发明人： Toshiyuki Oohashi ,  Yukio Wakui

IPC分类号： H01F7/02

CPC分类号： G01D5/145 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3295 ,  H01F13/00 ,  H01F17/0006 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49034

摘要： Disclosed is a magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer.The magnetic sensor includes a magnetoresistive effect element provided with narrow zonal portions including a pinned and a free layer. Disposed below both ends of the free layer are bias magnet films that apply a bias magnetic field to the free layer and an initializing coil 31 disposed near the free layer. Further, magnetizing the bias magnet films and fixing a direction of magnetization of the pinned layer are performed by a magnetic field formed by a magnet array configured such that permanent magnets are arranged on a lattice point of a tetragonal lattice wherein magnet pole polarity is different from adjacent magnet pole polarity spaced by the shortest route.

摘要翻译： 公开了一种具有能够稳定地保持自由层的磁畴中的磁化方向的磁阻效应元件的磁传感器。 磁传感器包括具有狭窄的区带部分的磁阻效应元件，包括固定和自由层。 在自由层的两端下方设置偏置磁体膜，其将偏置磁场施加到自由层，以及设置在自由层附近的初始化线圈31。 此外，通过由磁极阵列构成的磁场来进行磁化偏置磁体膜并固定被钉扎层的磁化方向，该磁场构造使得永久磁铁布置在四方晶格的格子点上，其中磁极极性不同于 相邻的磁极极性以最短的路线隔开。

公开(公告)号：US07508196B2

公开(公告)日：2009-03-24

申请号：US11391579

申请日：2006-03-28

申请人： Toshiyuki Oohashi ,  Yukio Wakui

发明人： Toshiyuki Oohashi ,  Yukio Wakui

IPC分类号： G01B7/14 ,  G01R33/09 ,  H01L43/08 ,  G01P15/105

CPC分类号： G06F3/0338

摘要： A magnetic sensor includes first through fourth GMR elements. The fixed layers of the first through fourth GMR elements have respective magnetization directions toward the X-axis positive, X-axis negative, Y-axis negative, and Y-axis positive directions. When a magnet is located at the initial position, the free layers of the first through fourth GMR elements have respective magnetization directions toward the Y-axis positive, Y-axis negative, X-axis negative, and X-axis positive directions. When the magnet is located at the initial position, the magnetization axis of the magnet passes through the centroid of the first through fourth GMR elements. The magnetic sensor detects, from the resistances of these GMR elements, changes in horizontal magnetic fields of the magnet which pass through the first through fourth GMR elements and which change in accordance with the moved position of the magnet, to thereby determine the position of the magnet.

摘要翻译： 磁传感器包括第一至第四GMR元件。 第一至第四GMR元件的固定层具有朝向X轴正，X轴负，Y轴负和Y轴正方向的各自的磁化方向。 当磁体位于初始位置时，第一至第四GMR元件的自由层具有朝向Y轴正，Y轴负，X轴负和X轴正方向的各自的磁化方向。 当磁体位于初始位置时，磁体的磁化轴穿过第一至第四GMR元件的质心。 磁传感器从这些GMR元件的电阻检测出通过第一至第四GMR元件的磁体的水平磁场的变化，并且根据磁体的移动位置发生变化，从而确定 磁铁。