发明授权
- 专利标题： Method of forming a contact in a semiconductor device
- 专利标题（中）： 在半导体器件中形成接触的方法
-
申请号： US10657140申请日： 2003-09-09
-
公开(公告)号： US06905960B2公开(公告)日： 2005-06-14
- 发明人: Hong-Mi Park , Jong-Sik Chun , Hyeon-Deok Lee , In-Sun Park , Jong-Myeong Lee , Ju-Cheol Shin
- 申请人： Hong-Mi Park , Jong-Sik Chun , Hyeon-Deok Lee , In-Sun Park , Jong-Myeong Lee , Ju-Cheol Shin
- 申请人地址： KR Suwon-Si
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： KR Suwon-Si
- 代理机构： Volentine Francos & Whitt,pllc
- 优先权： KR2002-57046 20020918
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/768 ; H01L21/44
摘要：
In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.
公开/授权文献
- US20040053491A1 Method of forming a contact in a semiconductor device 公开/授权日：2004-03-18