发明授权
- 专利标题： Sacrificial dielectric planarization layer
- 专利标题（中）： 牺牲电介质平坦化层
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申请号： US10674579申请日： 2003-09-29
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公开(公告)号： US06908863B2公开(公告)日： 2005-06-21
- 发明人: Chris E. Barns , Kevin P. O'Brien , Anne E. Miller
- 申请人： Chris E. Barns , Kevin P. O'Brien , Anne E. Miller
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Kathy J. Ortiz
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/311 ; H01L21/321 ; H01L21/4763 ; H01L21/768 ; H01L21/8238
摘要：
A method of forming a microelectronic structure and its associated structures is described. In one embodiment, a substrate is provided with a sacrificial layer disposed on a hard mask layer, and a metal layer disposed in a trench of the substrate and on the sacrificial layer. The metal layer is then removed at a first removal rate wherein a dishing is induced on a top surface of the metal layer until the sacrificial layer is exposed, and simultaneously removing the metal layer and the sacrificial layer at a second removal rate without substantially removing the hard mask.
公开/授权文献
- US20050070093A1 Sacrificial dielectric planarization layer 公开/授权日：2005-03-31
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