发明授权
US06911686B1 Semiconductor memory device having planarized upper surface and a SiON moisture barrier
有权
具有平坦化上表面和SiON防潮层的半导体存储器件
- 专利标题： Semiconductor memory device having planarized upper surface and a SiON moisture barrier
- 专利标题（中）： 具有平坦化上表面和SiON防潮层的半导体存储器件
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申请号： US09594091申请日： 2000-06-15
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公开(公告)号： US06911686B1公开(公告)日： 2005-06-28
- 发明人: Akio Itoh
- 申请人： Akio Itoh
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori Daniels & Adrian, LLP
- 优先权： JP11-170667 19990617
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/02 ; H01L21/3105 ; H01L21/314 ; H01L21/316 ; H01L21/8242 ; H01L21/8246 ; H01L27/115 ; H01L27/108
摘要：
There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of ferroelectric material or high-dielectric material, and a lower electrode on a semiconductor substrate, then forming an interlayer insulating film on the capacitor, then planarizing a surface of the interlayer insulating film by the CMP polishing, then removing a moisture attached to a surface of the interlayer insulating film or a moisture contained in the interlayer insulating film by applying the plasma annealing using an N2O gas, and then forming a redeposited interlayer film on the interlayer insulating film.