发明授权
- 专利标题： HDP process for high aspect ratio gap filling
- 专利标题（中）： HDP工艺用于高宽比间隙填充
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申请号： US10605857申请日： 2003-10-31
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公开(公告)号： US06914015B2公开(公告)日： 2005-07-05
- 发明人: Michael P. Belyansky , Patricia Argandona , Gregory DiBello , Andreas Knorr , Daewon Yang
- 申请人： Michael P. Belyansky , Patricia Argandona , Gregory DiBello , Andreas Knorr , Daewon Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Steven Capella
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/316 ; H01L21/318 ; H01L21/762 ; H01L21/8242 ; H01L21/31
摘要：
An HDP process for high aspect ratio gap filling comprises contacting a semiconductor substrate with an oxide precursor under high density plasma conditions at a first pressure less than about 10 millitorr, wherein said gaps are partially filled with oxide; and further contacting the substrate with an oxide precursor under high density plasma conditions at a second pressure greater than about 10 millitorr, wherein said gaps are further filled with oxide.
公开/授权文献
- US20050095872A1 HDP PROCESS FOR HIGH ASPECT RATIO GAP FILLING 公开/授权日：2005-05-05
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