发明授权
US06914922B2 Nitride based semiconductor light emitting device and nitride based semiconductor laser device
失效
基于氮化物的半导体发光器件和氮化物基半导体激光器件
- 专利标题： Nitride based semiconductor light emitting device and nitride based semiconductor laser device
- 专利标题（中）： 基于氮化物的半导体发光器件和氮化物基半导体激光器件
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申请号： US09898043申请日： 2001-07-05
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公开(公告)号： US06914922B2公开(公告)日： 2005-07-05
- 发明人: Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
- 申请人： Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
- 申请人地址： JP Moriguchi
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2000-208302 20000710
- 主分类号： H01L33/14
- IPC分类号： H01L33/14 ; H01L33/32 ; H01S5/20 ; H01S5/22 ; H01S5/323 ; H01S5/00 ; H01L29/06 ; H01L33/00
摘要：
A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.
公开/授权文献
- US20020003234A1 Nitride based semiconductor light emitting device 公开/授权日：2002-01-10
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