公开(公告)号：US06914922B2

公开(公告)日：2005-07-05

申请号：US09898043

申请日：2001-07-05

申请人： Nobuhiko Hayashi ,  Takenori Goto ,  Takashi Kano ,  Yasuhiko Nomura

发明人： Nobuhiko Hayashi ,  Takenori Goto ,  Takashi Kano ,  Yasuhiko Nomura

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/00 ,  H01L29/06 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01L33/14 ,  H01L33/32 ,  H01S5/2004 ,  H01S5/2218 ,  H01S5/2222 ,  H01S2301/18

摘要： A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.

摘要翻译： 半导体激光器件通过堆叠缓冲层，未掺杂的GaN层，n-GaN接触层，n-InGaN防裂层，n-AlGaN包层，发光层，p-AlGaN包层 ，和p-GaN接触层。 形成包含p-GaN接触层和p-AlGaN包覆层的脊部，并且脊部中的p-AlGaN包层的厚度小于0.3μm。

公开(公告)号：US20060011946A1

公开(公告)日：2006-01-19

申请号：US10506100

申请日：2003-02-28

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

IPC分类号： H01L27/10

CPC分类号： H01S5/32341 ,  H01S5/22 ,  H01S5/2219

摘要： A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).

摘要翻译： 一种氮化物半导体激光元件，其能够以良好的再现性控制光的横向限制，所述氮化物半导体元件包括n型包覆层（3），形成在所述包层（3）上的MQW发光层（4） 形成在发光层（4）上的p型覆盖层（5）和p型接触层（6），以及通过引入碳而形成的离子注入光吸收层（7） 包覆层（5）和接触层（6）中的电流通过区域（8）。

公开(公告)号：US07120181B1

公开(公告)日：2006-10-10

申请号：US09532786

申请日：2000-03-22

申请人： Nobuhiko Hayashi ,  Takenori Goto

发明人： Nobuhiko Hayashi ,  Takenori Goto

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/065 ,  H01S5/0658 ,  H01S5/2219 ,  H01S5/223 ,  H01S5/34333

摘要： In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a current blocking layer composed of n-AlGaN, and a p-second GaN cap layer are stacked in this order on a sapphire substrate, and a ridge portion having an upper surface having a width W1 is formed by etching. The current blocking layer has an opening having a width W2 on the upper surface of the ridge portion. The width W2 of the opening is smaller than the width W1 of the upper surface of the ridge portion. Accordingly, in a light emitting region of the MQW light emitting layer, a saturable light absorbing region is formed on both sides of a current injection region.

摘要翻译： 在半导体激光器件中，AlGaN缓冲层，GaN层，n-GaN层，n-AlGaN包覆层，MQW发光层，p-AlGaN包覆层，p第一GaN覆盖层， 由n-AlGaN构成的电流阻挡层和p-second GaN覆盖层依次层叠在蓝宝石基板上，具有宽度W 1 1的上表面的脊部由 蚀刻。 电流阻挡层在脊部的上表面上具有宽度W 2 2的开口。 开口的宽度W 2 2小于脊部的上表面的宽度W 1 1 <1>。 因此，在MQW发光层的发光区域中，在电流注入区域的两侧形成有可饱和的光吸收区域。

公开(公告)号：US5610096A

公开(公告)日：1997-03-11

申请号：US536370

申请日：1995-09-29

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5506170A

公开(公告)日：1996-04-09

申请号：US365176

申请日：1994-12-28

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5416790A

公开(公告)日：1995-05-16

申请号：US147779

申请日：1993-11-04

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5608752A

公开(公告)日：1997-03-04

申请号：US430497

申请日：1995-04-28

申请人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

发明人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/0658

摘要： In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.

摘要翻译： 在包括n型包覆层，形成在包层上的有源层，形成在有源层上的p型包层和设置在p型包层中的p型可饱和光吸收层的半导体激光器件中， 注入有源层的限流电流的限流宽度为W，有源层的厚度da，有源层的光限制因子GAMMA a，可饱和光吸收层的厚度ds，光限制因子 可饱和光吸收层的GAMMA和半导体激光装置的面上的光斑尺寸S被设定为满足预定关系。 光输出面的反射率设定在10〜20％的范围内。

公开(公告)号：US06904071B1

公开(公告)日：2005-06-07

申请号：US09532791

申请日：2000-03-22

申请人： Takenori Goto ,  Nobuhiko Hayashi

发明人： Takenori Goto ,  Nobuhiko Hayashi

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/065 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0658 ,  H01S5/2205 ,  H01S5/221 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/18

摘要： An n-contact layer, an n-cladding layer, an MQW active layer, and a p-first cladding layer are formed in this order on a sapphire substrate. An n-current blocking layer having a striped opening is formed on the p-first cladding layer. The width of the striped opening gradually increases from W2 to W1 as the depth thereof decreases from a lower layer to an upper layer in the current blocking layer. A p-second cladding layer is formed on the n-current blocking layer and on the p-first cladding layer inside the striped opening. The p-second cladding layer comprises a lower layer having the width W2 at its lower end and an upper layer having a width W1 lager than the width W2.

摘要翻译： 在蓝宝石衬底上依次形成n接触层，n包覆层，MQW有源层和p第一覆盖层。 在p第一覆层上形成具有条纹开口的n电流阻挡层。 由于当前阻挡层的深度从下层向上层减小，条纹开口的宽度从W 2逐渐增加到W1。 在n电流阻挡层和条形开口内的p第一包层上形成p第二覆层。 p第二包覆层包括其下端具有宽度W 2的下层和具有比宽度W 2更大的宽度W1的上层。

公开(公告)号：US06580736B1

公开(公告)日：2003-06-17

申请号：US09533970

申请日：2000-03-23

申请人： Tomoyuki Yoshie ,  Takenori Goto ,  Nobuhiko Hayashi

发明人： Tomoyuki Yoshie ,  Takenori Goto ,  Nobuhiko Hayashi

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/34333

摘要： In a semiconductor laser device, a buffer layer, an n-contact layer, an n-light cladding layer, an n-light guide layer, an emission layer, a p-cap layer, a p-light guide layer and an n-current blocking layer having a striped opening are successively formed on a sapphire substrate, and a p-light cladding layer is formed in the opening. A p-contact layer is formed on the p-light cladding layer and on the n-current blocking layer. The n-current blocking layer is made of n-Al0.3Ga0.7N and has an electron concentration of 1×1017 cm−3 and an Al composition greater than 0.1, and the surface thereof is terminated with N.

摘要翻译： 在半导体激光装置中，缓冲层，n接触层，n光包覆层，n光导层，发光层，p帽层，p导光层和n- 在蓝宝石基板上依次形成具有条纹开口的电流阻挡层，在开口部形成有p光包覆层。 p-接触层形成在p光覆层和n电流阻挡层上。 n电流阻挡层由n-Al 0.3 Ga 0.7 N制成，电子浓度为1×10 17 cm -3，Al组成大于0.1，其表面用N端接。

公开(公告)号：US06522676B1

公开(公告)日：2003-02-18

申请号：US09492008

申请日：2000-01-27

申请人： Takenori Goto ,  Nobuhiko Hayashi

发明人： Takenori Goto ,  Nobuhiko Hayashi

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0211 ,  H01S5/0213 ,  H01S5/0658 ,  H01S5/2205 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34333

摘要： A nitride semiconductor device of the self-pulsation type comprises as superposed on a substrate 1 an n-type cladding layer 3, active layer 4 and p-type cladding layer including an upwardly projecting stripe portion 53, an n-type current blocking layer 6 being formed at each of opposite sides of the stripe portion 53. The stripe portion 53 of the p-type cladding layer 5 comprises an upper stripe portion 51 and a lower stripe portion 52. The upper stripe portion 51 has a minimum width W1 at the position of the boundary between the upper and lower stripe portions 51, 52, and the lower stripe portion 52 has at the position of its lower end a width W2 greater than the minimum width W1 of the upper stripe portion 51. This construction realizes a higher yield than in the prior art.

摘要翻译： 自脉动型氮化物半导体器件包括在基板1上叠加n型包覆层3，有源层4和包括向上突出的条形部分53，n型电流阻挡层6的p型覆层 形成在条形部分53的相对两侧.p型包覆层5的条形部分53包括上条纹部分51和下条纹部分52.上条纹部分51具有最小宽度W1 上条带部分51和下条带部分52和下条部分52之间的边界的位置在其下端的宽度W2大于上条部分51的最小宽度W1的位置。这种结构实现了更高的 产率高于现有技术。