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    Nitride-based semiconductor laser device
    4.
    发明申请
    Nitride-based semiconductor laser device 审中-公开
    基于氮化物的半导体激光器件

    公开(公告)号：US20090010292A1

    公开(公告)日：2009-01-08

    申请号：US12213914

    申请日：2008-06-26

    申请人： Yasuhiko Nomura ,  Takashi Kano

    发明人： Yasuhiko Nomura ,  Takashi Kano

    IPC分类号： H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

    摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

    摘要翻译： 获得能够延长寿命的氮化物系半导体激光装置。 该氮化物系半导体激光装置包括由第一导电型氮化物系半导体构成的第一包层，形成在第一包层上的由氮化物系半导体和第二包层构成的发光层， 发射层，由第二导电型氮化物基半导体组成，而发射层包括发射光的有源层，用于限制光的导光层和布置在有源层和导光层之间的载流子阻挡层，具有 比导光层更大的带隙。

    Nitride-based semiconductor laser device
    5.
    发明申请
    Nitride-based semiconductor laser device 失效

    公开(公告)号：US20050224835A1

    公开(公告)日：2005-10-13

    申请号：US11147334

    申请日：2005-06-08

    申请人： Yasuhiko Nomura ,  Takashi Kano

    发明人： Yasuhiko Nomura ,  Takashi Kano

    IPC分类号： H01S5/20 ,  H01S5/343 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

    摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100252913A1

    公开(公告)日：2010-10-07

    申请号：US12818694

    申请日：2010-06-18

    申请人： Nobuhiko Hayashi ,  Takashi Kano

    发明人： Nobuhiko Hayashi ,  Takashi Kano

    IPC分类号： H01L29/20

    CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

    摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

    摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

    Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer
    9.
    发明申请
    Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer 有权
    半导体器件及其制造方法以及形成氮化物基半导体层的方法

    公开(公告)号：US20050145878A1

    公开(公告)日：2005-07-07

    申请号：US11054956

    申请日：2005-02-11

    申请人： Nobuhiko Hayashi ,  Takashi Kano

    发明人： Nobuhiko Hayashi ,  Takashi Kano

    IPC分类号： H01L21/316 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L29/22

    CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

    摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

    摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后在GaN层上生长包括MQW有源层的GaN半导体层，并且将SiO 2 膜使用外延横向过度生长。 通过蚀刻除去GaN基半导体层，除了在SiO 2膜上的区域中，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极， / SUB>膜，将GaN基半导体层上的p电极连接到GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。