发明授权
- 专利标题： Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
- 专利标题（中）： 用于在抛光铜膜后清洗半导体衬底的方法和设备
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申请号： US10639841申请日： 2003-08-12
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公开(公告)号： US06927198B2公开(公告)日： 2005-08-09
- 发明人: Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
- 申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Martine, Penilla & Gencarella, LLP
- 主分类号： C11D1/00
- IPC分类号： C11D1/00 ; C11D3/02 ; C11D7/02 ; C11D7/08 ; C11D7/26 ; C11D11/00 ; C23G1/10 ; H01L21/02 ; H01L21/304 ; H01L21/306 ; H01L21/308 ; H01L21/3205 ; H01L21/321
摘要：
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.