发明授权
- 专利标题: Field emission device
- 专利标题(中): 场发射装置
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申请号: US10635647申请日: 2003-08-07
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公开(公告)号: US06927534B2公开(公告)日: 2005-08-09
- 发明人: Jun-hee Choi , Seung-nam Cha , Hang-woo Lee
- 申请人: Jun-hee Choi , Seung-nam Cha , Hang-woo Lee
- 申请人地址: KR Suwon
- 专利权人: Samsung SDI Co., Ltd.
- 当前专利权人: Samsung SDI Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Burns, Doane, Swecker & Mathis, LLP
- 优先权: KR00-361 20000105
- 主分类号: H01J1/304
- IPC分类号: H01J1/304 ; H01J3/02 ; H01J3/18 ; H01J9/02 ; H01J9/14 ; H01J1/02 ; H01J1/62
摘要:
A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.
公开/授权文献
- US20040027052A1 Field emission device 公开/授权日:2004-02-12
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