发明授权
- 专利标题： Etching a metal hard mask for an integrated circuit structure
- 专利标题（中）： 刻蚀集成电路结构的金属硬掩模
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申请号： US10246844申请日： 2002-09-18
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公开(公告)号： US06930048B1公开(公告)日： 2005-08-16
- 发明人: SiYi Li , S.M. Rega Sadjadi , Sean S. Kang , Tri Le , Bi-Ming Yen , Scott Briggs
- 申请人： SiYi Li , S.M. Rega Sadjadi , Sean S. Kang , Tri Le , Bi-Ming Yen , Scott Briggs
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： IP Strategy Group, P.C.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/3213 ; H01L21/768
摘要：
The invention is a method of etching an integrated circuit (IC) structure that includes a metal hard mask layer. The etching of the metal hard mask layer is performed by first feeding a gas mixture comprising a fluorine containing gas and oxygen (O2) gas to a reactor. The method then proceeds to generate a plasma that etches the metal hard mask layer. The method can be applied to either performing a via etch or a trench etch. Additionally, the invention teaches the removal of a photoresist layer without affecting the metal hard mask layer.
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