发明授权
US06939797B2 Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof
失效
具有低k PE CVD覆盖层的高级BEOL互连结构及其方法
- 专利标题： Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof
- 专利标题（中）： 具有低k PE CVD覆盖层的高级BEOL互连结构及其方法
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申请号： US10706773申请日： 2003-11-12
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公开(公告)号： US06939797B2公开(公告)日： 2005-09-06
- 发明人: Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
- 申请人： Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Lisa U. Jaklitsch
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/314 ; H01L21/316 ; H01L21/318 ; H01L21/768 ; H01L23/532 ; H01L21/4763 ; H01L21/44 ; H01L21/461
摘要：
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.
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