公开(公告)号：US06939797B2

公开(公告)日：2005-09-06

申请号：US10706773

申请日：2003-11-12

申请人： Edward Barth ,  John A. Fitzsimmons ,  Stephen M. Gates ,  Thomas H. Ivers ,  Sarah L. Lane ,  Jia Lee ,  Ann McDonald ,  Vincent McGahay ,  Darryl D. Restaino

发明人： Edward Barth ,  John A. Fitzsimmons ,  Stephen M. Gates ,  Thomas H. Ivers ,  Sarah L. Lane ,  Jia Lee ,  Ann McDonald ,  Vincent McGahay ,  Darryl D. Restaino

IPC分类号： H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/461

CPC分类号： H01L21/76834 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76838 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

摘要翻译： 公开了一种先进的后端（BEOL）金属化结构。 该结构包括具有低介电常数（低-k）的扩散阻挡层或覆盖层，其中通过等离子体增强化学气相沉积（PE CVD）工艺，覆盖层由氮化硅形成。 金属化结构还包括由具有小于约4的介电常数的含碳电介质材料形成的层间电介质（ILD），以及优选由氮化硅或碳化硅形成的ILD上的连续硬掩模层。 还公开了一种用于形成BEOL金属化结构的方法。 该方法包括预清洁或预激活步骤，以改善盖层与下面的铜导体的粘合性。 预清洁或预活化步骤包括将铜表面暴露于包括氢，氨，氮和/或惰性气体的还原等离子体。

公开(公告)号：US06737747B2

公开(公告)日：2004-05-18

申请号：US10047965

申请日：2002-01-15

申请人： Edward Barth ,  John A. Fitzsimmons ,  Stephen M. Gates ,  Thomas H. Ivers ,  Sarah L. Lane ,  Jia Lee ,  Ann McDonald ,  Vincent McGahay ,  Darryl D. Restaino

发明人： Edward Barth ,  John A. Fitzsimmons ,  Stephen M. Gates ,  Thomas H. Ivers ,  Sarah L. Lane ,  Jia Lee ,  Ann McDonald ,  Vincent McGahay ,  Darryl D. Restaino

IPC分类号： H01L2348

CPC分类号： H01L21/76834 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76838 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

公开(公告)号：US06887783B2

公开(公告)日：2005-05-03

申请号：US10650890

申请日：2003-08-28

申请人： Tze-Chiang Chen ,  Brett H. Engel ,  John A. Fitzsimmons ,  Terence Kane ,  Naftall E. Lustig ,  Ann McDonald ,  Vincent McGahay ,  Soon-Cheon Seo ,  Anthony K. Stamper ,  Yun Yu Wang ,  Erdem Kaltalioglu

发明人： Tze-Chiang Chen ,  Brett H. Engel ,  John A. Fitzsimmons ,  Terence Kane ,  Naftall E. Lustig ,  Ann McDonald ,  Vincent McGahay ,  Soon-Cheon Seo ,  Anthony K. Stamper ,  Yun Yu Wang ,  Erdem Kaltalioglu

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

摘要翻译： 公开了一种先进的后端（BEOL）金属化结构。 该结构包括双层扩散阻挡层或盖，其中第一覆盖层由优选通过高密度等离子体化学气相沉积（HDP CVD）工艺沉积的电介质材料形成，并且第二覆盖层由介电材料形成，优选沉积 通过等离子体增强化学气相沉积（PE CVD）工艺。 还公开了一种用于形成BEOL金属化结构的方法。 本发明在包括用于层间电介质（ILD）的低k电介质材料和用于导体的铜的互连结构中是特别有用的。

公开(公告)号：US06914320B2

公开(公告)日：2005-07-05

申请号：US10807029

申请日：2004-03-23

申请人： Tze-Chiang Chen ,  Brett H. Engel ,  John A. Fitzsimmons ,  Terence Kane ,  Naftall E. Lustig ,  Ann McDonald ,  Vincent McGahay ,  Soon-Cheon Seo ,  Anthony K. Stamper ,  Yun Yu Wang ,  Erdem Kaltalioglu

发明人： Tze-Chiang Chen ,  Brett H. Engel ,  John A. Fitzsimmons ,  Terence Kane ,  Naftall E. Lustig ,  Ann McDonald ,  Vincent McGahay ,  Soon-Cheon Seo ,  Anthony K. Stamper ,  Yun Yu Wang ,  Erdem Kaltalioglu

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

摘要翻译： 公开了一种先进的后端（BEOL）金属化结构。 该结构包括双层扩散阻挡层或盖，其中第一覆盖层由优选通过高密度等离子体化学气相沉积（HDP CVD）工艺沉积的电介质材料形成，并且第二覆盖层由介电材料形成，优选沉积 通过等离子体增强化学气相沉积（PE CVD）工艺。 还公开了一种用于形成BEOL金属化结构的方法。 本发明在包括用于层间电介质（ILD）的低k电介质材料和用于导体的铜的互连结构中是特别有用的。

公开(公告)号：US07034400B2

公开(公告)日：2006-04-25

申请号：US10659778

申请日：2003-09-10

申请人： Edward P. Barth ,  Glenn A. Biery ,  Jeffrey P. Gambino ,  Thomas H. Ivers ,  Hyun K. Lee ,  Ernest N. Levine ,  Ann McDonald ,  Anthony K. Stamper

发明人： Edward P. Barth ,  Glenn A. Biery ,  Jeffrey P. Gambino ,  Thomas H. Ivers ,  Hyun K. Lee ,  Ernest N. Levine ,  Ann McDonald ,  Anthony K. Stamper

IPC分类号： H01L23/48

CPC分类号： H01L21/76807 ,  H01L21/76801 ,  H01L2221/1036

摘要： A metallization insulating structure, having a substrate; a substantially fluorine free insulating layer formed on the substrate, having a height, hi; a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height hf.

摘要翻译： 一种金属化绝缘结构，具有基板; 形成在基板上的基本上无氟的绝缘层，具有高度h1; 形成在基本上不含氟的绝缘层上的含氟绝缘层，具有高度h F 1。

公开(公告)号：US20060270245A1

公开(公告)日：2006-11-30

申请号：US10908833

申请日：2005-05-27

申请人： Richard Conti ,  Thomas Houghton ,  Michael Lofaro ,  Jeffery Maxson ,  Ann McDonald ,  Yun-Yu Wang ,  Keith Wong ,  Daewon Yang

发明人： Richard Conti ,  Thomas Houghton ,  Michael Lofaro ,  Jeffery Maxson ,  Ann McDonald ,  Yun-Yu Wang ,  Keith Wong ,  Daewon Yang

IPC分类号： H01L21/31

CPC分类号： H01L23/53238 ,  H01L21/28556 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a bilayer cap structure for interconnect structures that comprise copper metallization or other conductive metallization. Such bilayer cap structure includes a first cap layer formed by an unbiased high density plasma (HDP) chemical vapor deposition process, and a second cap layer over the first cap layer, where the second cap layer is formed by a biased high density plasma (bHDP) chemical vapor deposition process. During the bHDP chemical vapor deposition process, a low AC bias power is applied to the substrate to increase the ion bombardment on the substrate surface and to induce resputtering of the capping material, thereby forming a seamless second cap layer with excellent reactive ion etching (RIE) selectivity.

摘要翻译： 本发明涉及一种用于互连结构的双层盖结构，其包括铜金属化或其它导电金属化。 这种双层盖结构包括通过无偏高密度等离子体（HDP）化学气相沉积工艺形成的第一盖层和在第一盖层上的第二盖层，其中第二盖层由偏置的高密度等离子体（bHDP ）化学气相沉积工艺。 在bHDP化学气相沉积工艺期间，将低AC偏置功率施加到衬底上以增加衬底表面上的离子轰击并引起封盖材料的再溅射，从而形成具有优异的反应离子蚀刻（RIE）的无缝第二帽层 ）选择性。