发明授权
- 专利标题： Equipment for communication system and semiconductor integrated circuit device
- 专利标题（中）： 通信系统和半导体集成电路设备设备
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申请号： US10631086申请日： 2003-07-31
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公开(公告)号： US06940127B2公开(公告)日： 2005-09-06
- 发明人: Toshiya Yokogawa , Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Osamu Kusumoto
- 申请人： Toshiya Yokogawa , Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Osamu Kusumoto
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2000-353699 20001121
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L27/06 ; H01L29/10 ; H01L29/15 ; H01L29/24 ; H01L29/36 ; H01L29/772 ; H01L29/812 ; H01L29/872 ; H03D7/12 ; H03F3/60 ; H01L29/76
摘要：
Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of δ-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of δ-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the δ-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.