Invention Grant
US06943077B2 Selective spacer layer deposition method for forming spacers with different widths
失效
用于形成具有不同宽度的间隔物的选择性间隔层沉积方法
- Patent Title: Selective spacer layer deposition method for forming spacers with different widths
- Patent Title (中): 用于形成具有不同宽度的间隔物的选择性间隔层沉积方法
-
Application No.: US10408689Application Date: 2003-04-07
-
Publication No.: US06943077B2Publication Date: 2005-09-13
- Inventor: Ai-Sen Liu , Baw-Ching Perng , Ming-Ta Lei , Yih-Shung Lin , Cheng-Chung Lin , Chia-Hui Lin
- Applicant: Ai-Sen Liu , Baw-Ching Perng , Ming-Ta Lei , Yih-Shung Lin , Cheng-Chung Lin , Chia-Hui Lin
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW
- Agency: Duane Morris LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/302 ; H01L21/3105 ; H01L21/314 ; H01L21/336 ; H01L21/8234 ; H01L21/8238
Abstract:
A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.
Public/Granted literature
- US20040198060A1 Selective spacer layer deposition method for forming spacers with different widths Public/Granted day:2004-10-07
Information query
IPC分类:
