发明授权
US06949477B2 Method of fabricating a capacitive element for a semiconductor device
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制造用于半导体器件的电容元件的方法
- 专利标题: Method of fabricating a capacitive element for a semiconductor device
- 专利标题(中): 制造用于半导体器件的电容元件的方法
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申请号: US10640309申请日: 2003-08-14
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公开(公告)号: US06949477B2公开(公告)日: 2005-09-27
- 发明人: Ronald A. Weimer , Scott J. DeBoer , Dan Gealy , Husam N. Al-Shareef
- 申请人: Ronald A. Weimer , Scott J. DeBoer , Dan Gealy , Husam N. Al-Shareef
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dickstein Shapiro Morin & Oshinsky LLP
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/3105 ; H01L21/314 ; H01L21/316 ; H01L29/51 ; H01L21/31 ; H01L21/469
摘要:
A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.