利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US06963094B2 Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region 有权
具有漏极穿通阻挡区域的金属氧化物半导体晶体管和用于制造具有漏极穿通阻挡区域的金属氧化物半导体晶体管的方法

Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region
摘要：
Metal oxide semiconductor transistors and devices with such transistors and methods of fabricating such transistors and devices are provided. Such transistors may have a silicon well region having a first surface and having spaced apart source and drain regions therein. A gate insulator is provided on the first surface of the silicon well region and disposed between the source and drain regions and a gate electrode is provided on the gate insulator. A region of insulating material is disposed between a first surface of the drain region and the silicon well region. The region of insulating material extends toward but not to the source region. A source electrode is provided that contacts the source region. A drain electrode contacts the drain region and the region of insulating material.
摘要（中）：

提供了具有这种晶体管的金属氧化物半导体晶体管和器件以及制造这种晶体管和器件的方法。 这种晶体管可以具有硅阱区，其具有第一表面并且在其中具有间隔开的源极和漏极区。 栅极绝缘体设置在硅阱区的第一表面上并且设置在源极和漏极区之间，并且栅极被设置在栅极绝缘体上。 绝缘材料的区域设置在漏极区域的第一表面和硅阱区域之间。 绝缘材料的区域朝向但不延伸到源极区域。 提供接触源区的源电极。 漏电极接触漏极区域和绝缘材料区域。

公开/授权文献
信息查询
Espacenet
0/0