发明授权
- 专利标题： Method and apparatus for making an imprinted conductive circuit using semi-additive plating
- 专利标题（中）： 使用半添加电镀制作压印导电电路的方法和装置
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申请号： US10335196申请日： 2002-12-31
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公开(公告)号： US06974775B2公开(公告)日： 2005-12-13
- 发明人: Milan Keser , Boyd L. Coomer
- 申请人： Milan Keser , Boyd L. Coomer
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwegman, Lundberg, Woessner & Kluth, P.A.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/445 ; H01L21/4763 ; H01L21/48 ; H01L23/48 ; H01L29/40
摘要：
A method and apparatus for making an imprinted conductive circuit using semi-additive plating. A plurality of indented channels is formed on the substrate. The surface is coated with a conductive layer. Portions of the surface other than the indented channels are coated with a non-conductive layer, and metal is plated on the conductive layer in the channels. The non-conductive layer and the first conductive layer are removed from portions of the surface other than the indented channels. In some embodiments, a first set of channels has a first depth and a second set of channels has a second depth. The plating adds a first amount of metal in the first set of channels and the second set of channels. The first set of channels is coated with a non-conductive layer, and a second amount of additional conductive material is plated in the second set of channels.
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