- 专利标题： Interfacial oxidation process for high-k gate dielectric process integration
-
申请号： US10662875申请日： 2003-09-16
-
公开(公告)号： US06974779B2公开(公告)日： 2005-12-13
- 发明人: David L O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
- 申请人： David L O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
- 申请人地址： JP Tokyo US NY Armonk
- 专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人地址： JP Tokyo US NY Armonk
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/314 ; H01L21/316 ; H01L29/51 ; H01L21/469
摘要：
A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.