Invention Grant
- Patent Title: Attenuated embedded phase shift photomask blanks
- Patent Title (中): 嵌入式相移光掩模空白
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Application No.: US10727925Application Date: 2003-12-04
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Publication No.: US06979518B2Publication Date: 2005-12-27
- Inventor: Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
- Applicant: Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser
- Agent Daniel P. Morris, Esq.
- Main IPC: G03F1/32
- IPC: G03F1/32 ; C23C14/06 ; C23C14/08 ; H01L21/027 ; G03F9/00
Abstract:
An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.
Public/Granted literature
- US20040170907A1 Attenuated embedded phase shift photomask blanks Public/Granted day:2004-09-02
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