- 专利标题： Bi-layer silicon film and method of fabrication
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申请号： US09948461申请日： 2001-09-07
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公开(公告)号： US06991999B2公开(公告)日： 2006-01-31
- 发明人: Li Fu , Shulin Wang , Luo Lee , Steven A. Chen , Errol Sanchez
- 申请人： Li Fu , Shulin Wang , Luo Lee , Steven A. Chen , Errol Sanchez
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor & Zafman
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.
公开/授权文献
- US20030047734A1 Bi-layer silicon film and method of fabrication 公开/授权日：2003-03-13
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