公开(公告)号：US06991999B2

公开(公告)日：2006-01-31

申请号：US09948461

申请日：2001-09-07

申请人： Li Fu ,  Shulin Wang ,  Luo Lee ,  Steven A. Chen ,  Errol Sanchez

发明人： Li Fu ,  Shulin Wang ,  Luo Lee ,  Steven A. Chen ,  Errol Sanchez

IPC分类号： H01L29/04

CPC分类号： H01L21/28035 ,  H01L29/4925 ,  Y10S438/969

摘要： A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

公开(公告)号：US06559039B2

公开(公告)日：2003-05-06

申请号：US09858821

申请日：2001-05-15

申请人： Shulin Wang ,  Lee Luo ,  Steven A. Chen ,  Errol Sanchez ,  Xianzhi Tao ,  Zoran Dragojlovic ,  Li Fu

发明人： Shulin Wang ,  Lee Luo ,  Steven A. Chen ,  Errol Sanchez ,  Xianzhi Tao ,  Zoran Dragojlovic ,  Li Fu

IPC分类号： H01L2124

CPC分类号： H01L21/67103 ,  C23C16/24 ,  C23C16/45557 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/28556 ,  H01L21/76877

摘要： A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.

摘要翻译： 一种沉积掺杂多晶或非晶硅膜的方法。 该方法包括将基底放置在基座上。 感受体包括其中具有电阻加热器的主体和与电阻加热器物理接触的热电偶。 感受体位于处理室中，使得处理室具有在基座上方的顶部部分和基座下方的底部部分。 该方法还包括加热基座。 该方法还包括通过位于基座上的喷淋头将工艺气体混合物提供到处理室中。 处理气体混合物包括硅源气体，掺杂剂气体和载气。 载气包括氮气。 该方法还包括从硅源气体形成掺杂硅膜。

公开(公告)号：US20060024926A1

公开(公告)日：2006-02-02

申请号：US11229224

申请日：2005-09-16

申请人： Li Fu ,  Sheeba Panayil ,  Shulin Wang ,  Christopher Quentin ,  Lee Luo ,  Aihua Chen ,  Zianzhi Tao

发明人： Li Fu ,  Sheeba Panayil ,  Shulin Wang ,  Christopher Quentin ,  Lee Luo ,  Aihua Chen ,  Zianzhi Tao

IPC分类号： H01L21/20

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US07335266B2

公开(公告)日：2008-02-26

申请号：US11229224

申请日：2005-09-16

申请人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

发明人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

IPC分类号： C23C16/52 ,  C23C16/00 ,  G06F19/00 ,  C23C16/22 ,  C23C16/24

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US07658800B2

公开(公告)日：2010-02-09

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在所述处理室内并且限定彼此分离的第一和第二反应气体通道，并且将两个反应气体输送到位于所述气体分配组件附近的半导体工件。

公开(公告)号：US20080092815A1

公开(公告)日：2008-04-24

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在处理室内并且限定彼此分离的第一和第二反应气体通道，并将两个反应气体输送到位于气体分配组件附近的半导体工件。

公开(公告)号：US20070166459A1

公开(公告)日：2007-07-19

申请号：US11361950

申请日：2006-02-23

申请人： Frank Chang ,  Henry Ho ,  Shulin Wang ,  Li Fu ,  Qing Lv

发明人： Frank Chang ,  Henry Ho ,  Shulin Wang ,  Li Fu ,  Qing Lv

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An assembly and method for delivering a reactant material onto a substrate is described and which includes a delivery member which has a first surface, and an opposite second surface, and wherein the second surface is positioned adjacent to a substrate, and wherein an elongated substantially continuous channel is formed in the second surface of the delivery member, and which is coupled in fluid flowing relation relative to a source of reactant material, and wherein the elongated substantially continuous channel delivers the reactant material onto the substrate.

摘要翻译： 描述了用于将反应物材料递送到基底上的组件和方法，其包括具有第一表面和相对的第二表面的递送构件，并且其中第二表面邻近基底定位，并且其中细长的基本上连续的 通道形成在输送构件的第二表面中，并且相对于反应物材料源以流体流动的关系联接，并且其中细长的基本上连续的通道将反应物材料输送到基底上。

公开(公告)号：US06982214B2

公开(公告)日：2006-01-03

申请号：US10263105

申请日：2002-10-01

申请人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

发明人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

IPC分类号： H01L21/20

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US10400004B2

公开(公告)日：2019-09-03

申请号：US15502085

申请日：2014-12-23

申请人： Li Fu

发明人： Li Fu

IPC分类号： C07H15/26 ,  C07H1/00

摘要： The present invention relates to a chemical synthesis method for phillyrin. The method of the present invention comprises: first dissolving a glycosyl receptor phillygenin and a glycosyl donor in an organic solvent for glycosylation to obtain tetraacyl phillyrin; then dissolving the tetraacyl phillyrin in a second organic solvent, and adding sodium methoxide for deacylation, adding an acidic pH regulator to regulate the pH value of the reaction mixture to neutral; and finally carrying out purification treatment to obtain phillyrin. The advantages and practical values of the chemical synthesis method for phillyrin of the present invention lie in: the raw material is easy to get, the catalysts used for glycosylation are cheap and easy to get, the production cost is greatly reduced, and it can be used for industrial production.

公开(公告)号：US09333215B2

公开(公告)日：2016-05-10

申请号：US13941106

申请日：2013-07-12

申请人： Li Fu

发明人： Li Fu ,  Qi Lu

IPC分类号： A61K31/704 ,  A61K9/00 ,  A61K9/08 ,  A61K9/19 ,  A61K47/40 ,  A61K47/48 ,  B82Y5/00

CPC分类号： A61K31/704 ,  A61K9/0019 ,  A61K9/08 ,  A61K9/19 ,  A61K47/40 ,  A61K47/6951 ,  B82Y5/00 ,  Y02P20/582

摘要： A preparation of a kind of 20(R)-ginsenoside Rg3 medicinal composition aqueous solution containing ginsenoside Rg3 0.5˜10 mg/ml: add 0.1-5% of ginsenoside solution to 0.1˜30% of adjuvant A, B{circle around (1)}{circle around (2)}{circle around (5)} at the temperature of 40˜100° C., the ratio of these two is 1:1˜300, add water after the solvent is recycled under reduced pressure; another kind of 20(R)-ginsenoside Rg3 medicinal composition aqueous solution contains 0.1˜2 mg/ml of 20 (R) of the ginsenoside Rg3, the preparation: add 0.1˜5% of ginsenoside solution to 20˜65% of adjuvant B{circle around (3)}{circle around (4)} at the temperature of 60˜100° C., main material to adjuvant B=1:100˜400, add water after the solvent is recycled under reduced pressure. The above 20 (R) ginsenoside Rg3 composition aqueous solution and the powder after lyophilization can be used to prepare injectable, oral administration and external use, and the bioactivity of these preparations is high, and with the actions of anti cancer, efficacy potentiation and toxicity attenuation effects of the combined chemical or radiation therapy of tumor, enhancement of human immune functions, improvement of human memory, anti fatigue, and detumescence, pain relieving.

摘要翻译： 含有人参皂甙Rg3的20（R） - 人参皂苷Rg3药物组合物水溶液0.5〜10mg / ml的制剂：将0.1〜30％的人参皂甙溶液加入0.1〜30％的佐剂A，B ）} {圆周（2）} {圆周（5）}在40〜100℃的温度下，这两者的比例为1：1〜300，在减压下回收溶剂后加水; 另外一种20（R） - 人参皂甙Rg3药用组合物水溶液含有0.1〜2mg / ml的人参皂甙Rg3，其制备方法：将20〜65％的人参皂甙溶液加入0.1〜5％ {圆周围（3）} {圆周围（4）}，温度为60〜100℃，辅料B = 1：100〜400的主要原料，在减压下回收溶剂后加水。 上述20（R）人参皂苷Rg3组合物水溶液和冻干后的粉末可用于制备注射，口服和外用，并且这些制剂的生物活性高，并具有抗癌作用，功效增强和毒性 肿瘤组合化学或放射治疗的衰减效应，人体免疫功能的增强，人体记忆的改善，抗疲劳和消肿，疼痛缓解。