发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10671458申请日： 2003-09-29
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公开(公告)号： US06995434B2公开(公告)日： 2006-02-07
- 发明人: Ryosuke Usui , Kazuhiro Sasada
- 申请人： Ryosuke Usui , Kazuhiro Sasada
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2002-287305 20020930
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/119
摘要：
A semiconductor device capable of suppressing increase of the capacitance while suppressing a thin-line effect of a silicide film is obtained. This semiconductor device comprises a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode and a first silicide film formed on the first silicon layer for serving as the gate electrode.
公开/授权文献
- US20040150048A1 Semiconductor device and method of fabricating the same 公开/授权日：2004-08-05
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