发明授权
- 专利标题： Semiconductor wafer front side protection
- 专利标题（中）： 半导体晶圆正面保护
-
申请号： US10413698申请日： 2003-04-15
-
公开(公告)号： US07001827B2公开(公告)日： 2006-02-21
- 发明人: Allan D. Abrams , Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Rene A. Lamothe , Ivan J. Stone , Matthew R. Whalen
- 申请人： Allan D. Abrams , Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Rene A. Lamothe , Ivan J. Stone , Matthew R. Whalen
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 William N. Hogg
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46
摘要：
There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.
公开/授权文献
- US20040209444A1 Semiconductor wafer front side protection 公开/授权日：2004-10-21