Semiconductor wafer front side protection
    1.
    发明授权
    Semiconductor wafer front side protection 失效
    半导体晶圆正面保护

    公开(公告)号:US07001827B2

    公开(公告)日:2006-02-21

    申请号:US10413698

    申请日:2003-04-15

    IPC分类号: H01L21/30 H01L21/46

    CPC分类号: H01L21/304 H01L2221/6834

    摘要: There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

    摘要翻译: 提供了一种用于制造晶片的方法,包括以下步骤:提供具有第一表面,相对的第二表面的基底和限定基底的厚度的至少一个侧边缘,所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域,并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。

    Semiconductor wafer front side protection
    2.
    发明授权
    Semiconductor wafer front side protection 失效
    半导体晶圆正面保护

    公开(公告)号:US07288465B2

    公开(公告)日:2007-10-30

    申请号:US11117122

    申请日:2005-04-28

    IPC分类号: H01L21/30 H01L21/46

    摘要: There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

    摘要翻译: 提供了一种用于制造晶片的方法,包括以下步骤:提供具有第一表面,相对的第二表面和限定衬底的厚度的至少一个侧边缘的衬底,所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域,并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。