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16 条记录 (耗时 0.015 秒)

    Use of photoresist in substrate vias during backside grind
    3.
    发明授权
    Use of photoresist in substrate vias during backside grind 失效
    在背面研磨过程中在基板通孔中使用光致抗蚀剂

    公开(公告)号：US06888223B2

    公开(公告)日：2005-05-03

    申请号：US10405763

    申请日：2003-04-01

    申请人： Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Amye L. Wells

    发明人： Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Amye L. Wells

    IPC分类号： H01L21/768 ,  H01L23/048

    CPC分类号： H01L21/76898

    摘要： A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.

    摘要翻译： 一种结构和形成方法。 衬底在衬底的相对侧上具有前表面和后表面。 衬底具有从前表面测量的从后表面延伸到衬底的第二深度的背侧部分。 在衬底中形成至少一个通孔，并从前表面延伸到通孔深度进入衬底。 通孔深度特定于每个通孔。 每个通孔的通孔深度小于衬底的初始厚度。 第二深度不超过通孔深度的最小值。 将有机材料（例如光致抗蚀剂）插入每个通孔中。 随后用带覆盖有机材料，随后除去基材的背面部分。 随后从有机材料中取出胶带，然后从每个通孔中除去有机材料。

    Semiconductor wafer front side protection
    5.
    发明授权
    Semiconductor wafer front side protection 失效
    半导体晶圆正面保护

    公开(公告)号：US07001827B2

    公开(公告)日：2006-02-21

    申请号：US10413698

    申请日：2003-04-15

    申请人： Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    发明人： Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/304 ,  H01L2221/6834

    摘要： There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

    摘要翻译： 提供了一种用于制造晶片的方法，包括以下步骤：提供具有第一表面，相对的第二表面的基底和限定基底的厚度的至少一个侧边缘，所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域，并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。

    Semiconductor wafer front side protection
    8.
    发明授权
    Semiconductor wafer front side protection 失效
    半导体晶圆正面保护

    公开(公告)号：US07288465B2

    公开(公告)日：2007-10-30

    申请号：US11117122

    申请日：2005-04-28

    申请人： Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    发明人： Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/3081 ,  H01L21/304 ,  H01L2221/6834

    摘要： There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

    摘要翻译： 提供了一种用于制造晶片的方法，包括以下步骤：提供具有第一表面，相对的第二表面和限定衬底的厚度的至少一个侧边缘的衬底，所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域，并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。

    Use of photoresist in substrate vias during backside grind
    9.
    发明授权
    Use of photoresist in substrate vias during backside grind 失效
    在背面研磨过程中在基板通孔中使用光致抗蚀剂

    公开(公告)号：US07074715B2

    公开(公告)日：2006-07-11

    申请号：US10989059

    申请日：2004-11-15

    申请人： Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Amye L. Wells

    发明人： Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Amye L. Wells

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76898

    摘要： A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.

    摘要翻译： 一种结构和形成方法。 衬底在衬底的相对侧上具有前表面和后表面。 衬底具有从前表面测量的从后表面延伸到衬底的第二深度的背侧部分。 在衬底中形成至少一个通孔，并从前表面延伸到通孔深度进入衬底。 通孔深度特定于每个通孔。 每个通孔的通孔深度小于衬底的初始厚度。 第二深度不超过通孔深度的最小值。 将有机材料（例如光致抗蚀剂）插入每个通孔中。 随后用带覆盖有机材料，随后除去基材的背面部分。 随后从有机材料中取出胶带，然后从每个通孔中除去有机材料。

    Wafer thickness control during backside grind
    10.
    发明授权
    Wafer thickness control during backside grind 失效

    公开(公告)号：US06368881B1

    公开(公告)日：2002-04-09

    申请号：US09516445

    申请日：2000-02-29

    申请人： Donald W. Brouillette ,  Thomas G. Ference ,  Harold G. Linde ,  Michael S. Hibbs ,  Ronald L. Mendelson

    发明人： Donald W. Brouillette ,  Thomas G. Ference ,  Harold G. Linde ,  Michael S. Hibbs ,  Ronald L. Mendelson

    IPC分类号： H01L2100

    CPC分类号： H01L22/26

    摘要： A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.