- 专利标题: Vacuum-cavity MEMS resonator
-
申请号: US10921383申请日: 2004-08-19
-
公开(公告)号: US07002436B2公开(公告)日: 2006-02-21
- 发明人: Qing Ma , Peng Cheng , Valluri Rao
- 申请人: Qing Ma , Peng Cheng , Valluri Rao
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwegman, Lundberg, Woessner & Kluth, P.A.
- 主分类号: H03H9/10
- IPC分类号: H03H9/10 ; H03H9/24 ; H03H9/46
摘要:
A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.
公开/授权文献
- US20050036269A1 Vacuum-cavity MEMS resonator 公开/授权日:2005-02-17
信息查询