发明授权
- 专利标题： Zero threshold voltage pFET and method of making same
- 专利标题（中）： 零阈值电压pFET及其制作方法
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申请号： US10845835申请日： 2004-05-14
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公开(公告)号： US07005334B2公开(公告)日： 2006-02-28
- 发明人: Jeffrey S. Brown , Chung H. Lam , Randy W. Mann , Jeffery H. Oppold
- 申请人： Jeffrey S. Brown , Chung H. Lam , Randy W. Mann , Jeffery H. Oppold
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Downs Rachlin Martin PLLC
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A zero threshold voltage (ZVt) pFET (104) and a method of making the same. The ZVt pFET is made by implanting a p-type substrate (112) with a retrograde n-well (116) so that a pocket (136) of the p-type substrate material remains adjacent the surface of the substrate. This is accomplished using an n-well mask (168) having a pocket-masking region (184) in the aperture (180) corresponding to the ZVt pFET. The n-well may be formed by first creating a ring-shaped precursor n-well (116′) and then annealing the substrate so as to cause the regions of the lower portion (140′) of the precursor n-well to merge with one another to isolate the pocket of p-type substrate material. After the n-well and isolated pocket of p-type substrate material have been formed, remaining structures of the ZVt pFET may be formed, such as a gate insulator (128), gate (132), source (120), and drain (124).
公开/授权文献
- US20040251475A1 Zero threshold voltage pFET and method of making same 公开/授权日：2004-12-16
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