发明授权
- 专利标题： Memory device with barrier layer
- 专利标题（中）： 具有阻挡层的存储器件
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申请号： US11194471申请日： 2005-08-02
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公开(公告)号： US07053445B1公开(公告)日： 2006-05-30
- 发明人: Youseok Suh , Satoshi Torii , Lei Xue
- 申请人： Youseok Suh , Satoshi Torii , Lei Xue
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Spansion LLC
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A memory device may include a substrate, a dielectric layer formed on the substrate and a charge storage element formed on the dielectric layer. The memory device may also include an inter-gate dielectric formed on the charge storage element, a barrier layer formed on the inter-gate dielectric and a control gate formed on the barrier layer. The barrier layer prevents reaction between the control gate and the inter-gate dielectric.
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