- 专利标题: Double gate device having a heterojunction source/drain and strained channel
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申请号: US10952676申请日: 2004-09-29
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公开(公告)号: US07067868B2公开(公告)日: 2006-06-27
- 发明人: Voon-Yew Thean , Mariam G. Sadaka , Ted R. White , Alexander L. Barr , Venkat R. Kolagunta , Bich-Yen Nguyen , Victor H. Vartanian , Da Zhang
- 申请人: Voon-Yew Thean , Mariam G. Sadaka , Ted R. White , Alexander L. Barr , Venkat R. Kolagunta , Bich-Yen Nguyen , Victor H. Vartanian , Da Zhang
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Robert L. King; Michael J. Balconi-Lamic
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
A semiconductor device (10) is formed by positioning a gate (22) overlying a semiconductor layer (16) of preferably silicon. A semiconductor material (26) of, for example only, SiGe or Ge, is formed adjacent the gate over the semiconductor layer and over source/drain regions. A thermal process diffuses the stressor material into the semiconductor layer. Lateral diffusion occurs to cause the formation of a strained channel (17) in which a stressor material layer (30) is immediately adjacent the strained channel. Extension implants create source and drain implants from a first portion of the stressor material layer. A second portion of the stressor material layer remains in the channel between the strained channel and the source and drain implants. A heterojunction is therefore formed in the strained channel. In another form, oxidation of the stressor material occurs rather than extension implants to form the strained channel.