发明授权
US07108953B2 Dissolution inhibitors in photoresist compositions for microlithography
有权
用于微光刻的光致抗蚀剂组合物中的溶解抑制剂
- 专利标题： Dissolution inhibitors in photoresist compositions for microlithography
- 专利标题（中）： 用于微光刻的光致抗蚀剂组合物中的溶解抑制剂
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申请号： US10380990申请日： 2001-10-12
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公开(公告)号： US07108953B2公开(公告)日： 2006-09-19
- 发明人: Larry L. Berger , Jerald Feldman , Viacheslav Alexandrovich Petrov , Frank L. Schadt, III , Andrew E. Feiring , Fredrick Claus Zumsteg, Jr.
- 申请人： Larry L. Berger , Jerald Feldman , Viacheslav Alexandrovich Petrov , Frank L. Schadt, III , Andrew E. Feiring , Fredrick Claus Zumsteg, Jr.
- 申请人地址： US DE Wilmington
- 专利权人： E. I. du Pont de Nemours and Company
- 当前专利权人： E. I. du Pont de Nemours and Company
- 当前专利权人地址： US DE Wilmington
- 国际申请： PCT/US01/42662 WO 20011012
- 国际公布： WO02/31595 WO 20020418
- 主分类号： G03C1/73
- IPC分类号： G03C1/73 ; G03C1/76 ; G03F7/039 ; G03F7/20 ; G03F7/30
摘要：
The invention relates to a photoresist composition comprising a polymeric binder; a photoactive component; and at least one dissolution inhibitor comprising a paraffinic or cycloparaffinic compound containing at least one functional group having the structure —C(Rf)(Rf′)OR wherein Rf and Rf′ are the same or different fluoroalkyl groups of from one or taken together are (CF2)a wherein a is an integer ranging from 2 to about 10 and R is a hydrogen atom or an acid labile protecting group. Typically, the dissolution inhibitor has an absorption coefficient of less than about 4.0 μm at a wavelength of 157 nm.
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