Invention Grant
US07108953B2 Dissolution inhibitors in photoresist compositions for microlithography
有权
用于微光刻的光致抗蚀剂组合物中的溶解抑制剂
- Patent Title: Dissolution inhibitors in photoresist compositions for microlithography
- Patent Title (中): 用于微光刻的光致抗蚀剂组合物中的溶解抑制剂
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Application No.: US10380990Application Date: 2001-10-12
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Publication No.: US07108953B2Publication Date: 2006-09-19
- Inventor: Larry L. Berger , Jerald Feldman , Viacheslav Alexandrovich Petrov , Frank L. Schadt, III , Andrew E. Feiring , Fredrick Claus Zumsteg, Jr.
- Applicant: Larry L. Berger , Jerald Feldman , Viacheslav Alexandrovich Petrov , Frank L. Schadt, III , Andrew E. Feiring , Fredrick Claus Zumsteg, Jr.
- Applicant Address: US DE Wilmington
- Assignee: E. I. du Pont de Nemours and Company
- Current Assignee: E. I. du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- International Application: PCT/US01/42662 WO 20011012
- International Announcement: WO02/31595 WO 20020418
- Main IPC: G03C1/73
- IPC: G03C1/73 ; G03C1/76 ; G03F7/039 ; G03F7/20 ; G03F7/30

Abstract:
The invention relates to a photoresist composition comprising a polymeric binder; a photoactive component; and at least one dissolution inhibitor comprising a paraffinic or cycloparaffinic compound containing at least one functional group having the structure —C(Rf)(Rf′)OR wherein Rf and Rf′ are the same or different fluoroalkyl groups of from one or taken together are (CF2)a wherein a is an integer ranging from 2 to about 10 and R is a hydrogen atom or an acid labile protecting group. Typically, the dissolution inhibitor has an absorption coefficient of less than about 4.0 μm at a wavelength of 157 nm.
Public/Granted literature
- US20050260519A1 Dissolution inhibitors in photoresist compositions for microlithography Public/Granted day:2005-11-24
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