Invention Grant
US07110278B2 Crosspoint memory array utilizing one time programmable antifuse cells
有权
交叉点存储阵列利用一次可编程反熔丝电池
- Patent Title: Crosspoint memory array utilizing one time programmable antifuse cells
- Patent Title (中): 交叉点存储阵列利用一次可编程反熔丝电池
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Application No.: US10954537Application Date: 2004-09-29
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Publication No.: US07110278B2Publication Date: 2006-09-19
- Inventor: Ali Keshavarzi , Fabrice Paillet , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Mohsen Alavi , Vivek K. De
- Applicant: Ali Keshavarzi , Fabrice Paillet , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Mohsen Alavi , Vivek K. De
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C17/08
- IPC: G11C17/08
Abstract:
Crosspoint memory arrays utilizing one time programmable antifuse cells are disclosed.
Public/Granted literature
- US20060067152A1 Crosspoint memory array utilizing one time programmable antifuse cells Public/Granted day:2006-03-30
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