发明授权
US07132353B1 Boron diffusion barrier by nitrogen incorporation in spacer dielectrics
失效
通过在间隔电介质中掺入氮的硼扩散势垒
- 专利标题： Boron diffusion barrier by nitrogen incorporation in spacer dielectrics
- 专利标题（中）： 通过在间隔电介质中掺入氮的硼扩散势垒
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申请号： US11195398申请日： 2005-08-02
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公开(公告)号： US07132353B1公开(公告)日： 2006-11-07
- 发明人: Li-Qun Xia , Mei-Yee Shek , Troy Kim , Vladamir Zubkov , Ritwik Bhatia
- 申请人： Li-Qun Xia , Mei-Yee Shek , Troy Kim , Vladamir Zubkov , Ritwik Bhatia
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
A method of forming a sidewall spacer on a gate electrode is described. The method includes generating a first plasma from a silicon containing precursor and oxide precursor, and forming a silicon oxy-nitride layer on the sidewall of the gate electrode. The method also includes generating a second plasma from the silicon containing precursor and a nitrogen precursor, and forming a nitride layer on the silicon oxy-nitride layer. The silicon containing precursor can flow continuously between the generation of the first and the second plasmas. Also, a method of forming a sidewall spacer on the side of a gate electrode on a substrate. The method includes forming an oxy-nitride layer on the sidewall, and forming a nitride layer on the oxy-nitride layer, where the substrate wafer is not exposed to air between the formation of the layers.
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