Invention Grant
- Patent Title: Edge seal for a semiconductor device
- Patent Title (中): 半导体器件的边缘密封
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Application No.: US10694500Application Date: 2003-10-27
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Publication No.: US07163883B2Publication Date: 2007-01-16
- Inventor: Birendra N. Agarwala , Hormazdyar Minocher Dalal , Eric G. Liniger , Diana Llera-Hurlburt , Du Binh Nguyen , Richard W. Procter , Hazara Singh Rathore , Chunyan E. Tian , Brett H. Engel
- Applicant: Birendra N. Agarwala , Hormazdyar Minocher Dalal , Eric G. Liniger , Diana Llera-Hurlburt , Du Binh Nguyen , Richard W. Procter , Hazara Singh Rathore , Chunyan E. Tian , Brett H. Engel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ira D. Blecker
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763 ; H01L21/8238

Abstract:
An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric.
Public/Granted literature
- US20040087078A1 Edge seal for a semiconductor device Public/Granted day:2004-05-06
Information query
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