发明授权
- 专利标题： Wafer with vertical diode structures
- 专利标题（中）： 具有垂直二极管结构的晶圆
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申请号： US11210357申请日： 2005-08-24
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公开(公告)号： US07170103B2公开(公告)日： 2007-01-30
- 发明人: Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
- 申请人： Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Trask Britt
- 主分类号： H01L29/88
- IPC分类号： H01L29/88 ; H01L29/861
摘要：
A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The diode opening is initially filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that is heavily doped with a first type dopant and a bottom portion that is lightly doped with a second type dopant. The top portion is bounded by the bottom portion so as not to contact the titanium silicide layer. For one embodiment of the vertical diode, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
公开/授权文献
- US20060008975A1 Wafer with vertical diode structures 公开/授权日：2006-01-12
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