发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10983610申请日： 2004-11-09
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公开(公告)号： US07170110B2公开(公告)日： 2007-01-30
- 发明人: Akira Inoue , Takeshi Takagi , Yoshihiro Hara , Minoru Kubo
- 申请人： Akira Inoue , Takeshi Takagi , Yoshihiro Hara , Minoru Kubo
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2001-104102 20010403; JP2001-150719 20010521
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; H01L29/772
摘要：
A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
公开/授权文献
- US20050093020A1 Semiconductor device and method for fabricating the same 公开/授权日：2005-05-05
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