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227 条记录 (耗时 0.031 秒)

    Semiconductor device
    4.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06815735B2

    公开(公告)日：2004-11-09

    申请号：US10311267

    申请日：2002-12-13

    申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

    发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

    IPC分类号： H01L310328

    CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/783 ,  H01L29/78606 ,  H01L29/78687 ,  H01L29/802

    摘要： A semiconductor layer 30 of a graded SiGe-HDTMOS is constructed of an upper Si film 12, an Si buffer layer 13, an Si1−xGex film 14 and an Si cap layer 15. The region between a source region 20a and drain region 20b of the semiconductor layer 30 includes a high concentration n-type Si body region 22 and an n Si region 23, an Si cap region 25 and an SiGe channel region 24. A Ge composition ratio x of the Si1−xGex film 14 is made to increase from the Si buffer layer 13 to the Si cap layer 15. For the p-type HDTMOS, the electron current component of the substrate current decreases.

    摘要翻译： 梯度SiGe-HDTMOS的半导体层30由上部Si膜12，Si缓冲层13，Si1-xGex膜14和Si覆盖层15构成。源区域20a和漏极区域20b之间的区域 半导体层30包括高浓度n型Si体区域22和n Si区域23，Si帽区域25和SiGe沟道区域24.使Si1-xGex膜14的Ge组成比x增加 从Si缓冲层13到Si覆盖层15.对于p型HDTMOS，衬底电流的电子电流分量降低。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06917075B2

    公开(公告)日：2005-07-12

    申请号：US10752409

    申请日：2004-01-07

    申请人： Akira Inoue ,  Akira Asai ,  Teruhito Ohnishi ,  Haruyuki Sorada ,  Yoshihiro Hara ,  Takeshi Takagi

    发明人： Akira Inoue ,  Akira Asai ,  Teruhito Ohnishi ,  Haruyuki Sorada ,  Yoshihiro Hara ,  Takeshi Takagi

    IPC分类号： H01L21/336 ,  H01L21/768 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/66772 ,  H01L21/76895 ,  H01L29/783 ,  H01L29/78615 ,  H01L29/78621

    摘要： A semiconductor device and a method of fabricating the same according to this invention are such that: a gate insulator is formed over a predetermined region of a semiconductor substrate; a gate electrode is formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.

    摘要翻译： 根据本发明的半导体器件及其制造方法是：在半导体衬底的预定区域上形成栅极绝缘体; 栅电极形成在栅极绝缘体上; 源极和漏极区域分别形成在预定区域的位于栅极电极的两侧的部分中; 由不同于所述源极和漏极区域的所述预定区域的区域形成的体区; 以及使所述栅电极和所述体区域电连接的触点，其中，与所述栅电极连接的所述触点的一部分在平面图中形成为与所述栅电极相交。

    Heterojunction bipolar transistor having reduced driving voltage requirements
    7.
    发明授权
    Heterojunction bipolar transistor having reduced driving voltage requirements 有权
    具有降低的驱动电压要求的异质结双极晶体管

    公开(公告)号：US07135721B2

    公开(公告)日：2006-11-14

    申请号：US10872477

    申请日：2004-06-22

    申请人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

    发明人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

    IPC分类号： H01L29/739 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： H01L29/7378

    摘要： The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer having a low C content or a SiGe layer, and a Si cap layer 14 including an emitter region. The C content is less than 0.8% in at least the emitter-side boundary portion of the second base region. This suppresses formation of recombination centers due to a high C content in a depletion layer at the emitter-base junction, and improves electric characteristics such as the gain thanks to reduction in recombination current, while low-voltage driving is maintained.

    摘要翻译： 本发明的双极晶体管包括Si集电极掩埋层，由具有高C含量的SiGeC层制成的第一基极区域，具有低C含量的SiGeC层或SiGe层制成的第二基极区域，以及 Si覆盖层14包括发射极区域。 至少在第二基极区域的发射极边界部分中，C含量小于0.8％。 这抑制了由于在发射极 - 基极结处的耗尽层中的高C含量而导致的复合中心的形成，并且由于复合电流的降低而改善了诸如增益的电特性，同时维持了低电压驱动。

    Apparatus for fabricating semiconductor device and fabrication method therefor
    8.
    发明授权
    Apparatus for fabricating semiconductor device and fabrication method therefor 失效
    用于制造半导体器件的装置及其制造方法

    公开(公告)号：US06277657B1

    公开(公告)日：2001-08-21

    申请号：US09530926

    申请日：2000-05-08

    申请人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

    发明人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

    IPC分类号： H01L2100

    CPC分类号： C30B29/06 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

    摘要： A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si2H6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating &PSgr;, &Dgr;. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.

    摘要翻译： 晶体生长装置包括真空容器，加热灯，用于控制加热灯的灯控制器，气体入口端口，用于调节气体流量的流量调节器，用于测量基板温度的高温计， 以及用于向真空容器供给Si 2 H 6气体等的气体供给单元。 用于椭圆测量的装置包括：光源，偏振器，调制器，分析器，分光计/检测器单元和用于计算＆amp; EDG的分析控制单元。 在从基板上除去化学氧化物膜的同时，原位椭圆测量可以区分衬底的表面被氧化膜覆盖的相1和衬底的表面部分露出的相2 使得适合于各个相的气体供应被执行和停止。

    Heterojunction bipolar transistor
    9.
    发明授权
    Heterojunction bipolar transistor 有权

    公开(公告)号：US06759697B2

    公开(公告)日：2004-07-06

    申请号：US10461364

    申请日：2003-06-16

    申请人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

    发明人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

    IPC分类号： H01L29737

    CPC分类号： H01L29/7378

    摘要： The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer having a low C content or a SiGe layer, and a Si cap layer 14 including an emitter region. The C content is less than 0.8% in at least the emitter-side boundary portion of the second base region. This suppresses formation of recombination centers due to a high C content in a depletion layer at the emitter-base junction, and improves electric characteristics such as the gain thanks to reduction in recombination current, while low-voltage driving is maintained.

    Semiconductor device and method for fabricating the same
    10.
    发明授权
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06399993B1

    公开(公告)日：2002-06-04

    申请号：US09786551

    申请日：2001-03-07

    申请人： Teruhito Ohnishi ,  Akira Asai ,  Takeshi Takagi ,  Tohru Saitoh ,  Yo Ichikawa ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Koji Katayama ,  Yoshihiko Kanzawa

    发明人： Teruhito Ohnishi ,  Akira Asai ,  Takeshi Takagi ,  Tohru Saitoh ,  Yo Ichikawa ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Koji Katayama ,  Yoshihiko Kanzawa

    IPC分类号： H01L2972

    CPC分类号： H01L21/76237 ,  H01L21/8249

    摘要： In a bipolar transistor block, a base layer (20a) of SiGe single crystals and an emitter layer (26) of almost 100% of Si single crystals are stacked in this order over a collector diffused layer (9). Over both edges of the base layer (20a), a base undercoat insulating film (5a) and base extended electrodes (22) made of polysilicon are provided. The base layer (20a) has a peripheral portion with a thickness equal to that of the base undercoat insulating film (5a) and a center portion thicker than the peripheral portion. The base undercoat insulating film (5a) and gate insulating films (5b and 5c) for a CMOS block are made of the same oxide film. A stress resulting from a difference in thermal expansion coefficient between the SiGe layer as the base layer and the base undercoat insulating film 5a can be reduced, and a highly reliable BiCMOS device is realized.

    摘要翻译： 在双极晶体管块中，SiGe单晶的基极层（20a）和几乎100％的Si单晶的发射极层（26）依次层叠在集电极扩散层（9）上。 在基底层（20a）的两个边缘上设置有由多晶硅制成的基底底涂层绝缘膜（5a）和基底延伸电极（22）。 基底层（20a）具有与基底底涂层绝缘膜（5a）的厚度相等的周边部分和比周边部分厚的中心部分。 用于CMOS块的基底涂层绝缘膜（5a）和栅极绝缘膜（5b和5c）由相同的氧化物膜制成。 由于作为基底层的SiGe层与基底底涂层绝缘膜5a之间的热膨胀系数的差异导致的应力可以降低，并且实现了高可靠性的BiCMOS器件。