公开(公告)号：US20050093020A1

公开(公告)日：2005-05-05

申请号：US10983610

申请日：2004-11-09

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/092 ,  H01L27/115 ,  H01L27/12 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L31/0392

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。 将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。 用EHF波照射局部加热电介质膜，例如PZT膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

公开(公告)号：US07170110B2

公开(公告)日：2007-01-30

申请号：US10983610

申请日：2004-11-09

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L29/161 ,  H01L29/772

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。 将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。 用EHF波照射局部加热电介质膜，例如PZT膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

公开(公告)号：US06872989B2

公开(公告)日：2005-03-29

申请号：US10370766

申请日：2003-02-24

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/092 ,  H01L27/115 ,  H01L27/12 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L31/0312

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 在Si衬底101上依次沉积氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。将Si衬底101放置在室106中，以便将PZT膜105x照射 EHF波108.用EHF波的照射局部加热诸如PZT膜的电介质膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

公开(公告)号：US06815735B2

公开(公告)日：2004-11-09

申请号：US10311267

申请日：2002-12-13

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L310328

CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/783 ,  H01L29/78606 ,  H01L29/78687 ,  H01L29/802

摘要： A semiconductor layer 30 of a graded SiGe-HDTMOS is constructed of an upper Si film 12, an Si buffer layer 13, an Si1−xGex film 14 and an Si cap layer 15. The region between a source region 20a and drain region 20b of the semiconductor layer 30 includes a high concentration n-type Si body region 22 and an n Si region 23, an Si cap region 25 and an SiGe channel region 24. A Ge composition ratio x of the Si1−xGex film 14 is made to increase from the Si buffer layer 13 to the Si cap layer 15. For the p-type HDTMOS, the electron current component of the substrate current decreases.

摘要翻译： 梯度SiGe-HDTMOS的半导体层30由上部Si膜12，Si缓冲层13，Si1-xGex膜14和Si覆盖层15构成。源区域20a和漏极区域20b之间的区域 半导体层30包括高浓度n型Si体区域22和n Si区域23，Si帽区域25和SiGe沟道区域24.使Si1-xGex膜14的Ge组成比x增加 从Si缓冲层13到Si覆盖层15.对于p型HDTMOS，衬底电流的电子电流分量降低。

公开(公告)号：US06852602B2

公开(公告)日：2005-02-08

申请号：US10298000

申请日：2002-01-30

申请人： Yoshihiko Kanzawa ,  Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Yoshihiro Hara ,  Takeshi Takagi ,  Takahiro Kawashima

发明人： Yoshihiko Kanzawa ,  Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Yoshihiro Hara ,  Takeshi Takagi ,  Takahiro Kawashima

IPC分类号： H01L21/205 ,  H01L29/15 ,  H01L29/24 ,  H01L29/737 ,  H01L29/80 ,  H01L21/331

CPC分类号： H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/155 ,  H01L29/1608 ,  H01L29/7378 ,  H01L29/802

摘要： A multi-layer film 10 is formed by stacking a Si1-x1-y1Gex1Cy1 layer (0≦x1 y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8 layer 12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.

摘要翻译： 通过层叠具有小Ge摩尔分数的Si1-x1-y1Gex1Cy1层（0 <= x1 <1和0 y2），例如Si0.2Ge0.8层 以这种方式，多层膜用作结合到晶格点中的C原子的SiGeC层的范围延伸到Ge摩尔分数高的高度。

公开(公告)号：US06277657B1

公开(公告)日：2001-08-21

申请号：US09530926

申请日：2000-05-08

申请人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

发明人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

IPC分类号： H01L2100

CPC分类号： C30B29/06 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

摘要： A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si2H6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating &PSgr;, &Dgr;. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.

摘要翻译： 晶体生长装置包括真空容器，加热灯，用于控制加热灯的灯控制器，气体入口端口，用于调节气体流量的流量调节器，用于测量基板温度的高温计， 以及用于向真空容器供给Si 2 H 6气体等的气体供给单元。 用于椭圆测量的装置包括：光源，偏振器，调制器，分析器，分光计/检测器单元和用于计算＆amp; EDG的分析控制单元。 在从基板上除去化学氧化物膜的同时，原位椭圆测量可以区分衬底的表面被氧化膜覆盖的相1和衬底的表面部分露出的相2 使得适合于各个相的气体供应被执行和停止。

公开(公告)号：US07135721B2

公开(公告)日：2006-11-14

申请号：US10872477

申请日：2004-06-22

申请人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

发明人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

IPC分类号： H01L29/739 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/7378

摘要： The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer having a low C content or a SiGe layer, and a Si cap layer 14 including an emitter region. The C content is less than 0.8% in at least the emitter-side boundary portion of the second base region. This suppresses formation of recombination centers due to a high C content in a depletion layer at the emitter-base junction, and improves electric characteristics such as the gain thanks to reduction in recombination current, while low-voltage driving is maintained.

摘要翻译： 本发明的双极晶体管包括Si集电极掩埋层，由具有高C含量的SiGeC层制成的第一基极区域，具有低C含量的SiGeC层或SiGe层制成的第二基极区域，以及 Si覆盖层14包括发射极区域。 至少在第二基极区域的发射极边界部分中，C含量小于0.8％。 这抑制了由于在发射极 - 基极结处的耗尽层中的高C含量而导致的复合中心的形成，并且由于复合电流的降低而改善了诸如增益的电特性，同时维持了低电压驱动。

公开(公告)号：US06759697B2

公开(公告)日：2004-07-06

申请号：US10461364

申请日：2003-06-16

申请人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

发明人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

IPC分类号： H01L29737

CPC分类号： H01L29/7378

摘要： The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer having a low C content or a SiGe layer, and a Si cap layer 14 including an emitter region. The C content is less than 0.8% in at least the emitter-side boundary portion of the second base region. This suppresses formation of recombination centers due to a high C content in a depletion layer at the emitter-base junction, and improves electric characteristics such as the gain thanks to reduction in recombination current, while low-voltage driving is maintained.

公开(公告)号：US07105449B1

公开(公告)日：2006-09-12

申请号：US10111599

申请日：2000-10-27

申请人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh

发明人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh

IPC分类号： H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/8249

摘要： A thermal cleaning of a substrate that has been subjected to wet cleaning is carried out under a high vacuum atmosphere to remove an oxide film remaining on the substrate. Thereafter, a thermal cleaning is carried out under a hydrogen atmosphere to remove contamination such as carbon or the like. At this time, the oxide film has already been removed and therefore contamination is effectively removed by a relatively low temperature and short duration thermal cleaning. Thus, problems such as the degradation of the profile of the impurity concentration in the impurity diffusion layer which has been formed over the substrate are prevented.

摘要翻译： 进行了湿式清洗的基板的热清洗是在高真空气氛下进行的，以除去留在基板上的氧化膜。 此后，在氢气氛下进行热清洗以除去诸如碳等的污染物。 此时，氧化膜已经被去除，因此通过相对低的温度和短时间的热清洁有效地去除污染。 因此，防止了在衬底上形成的杂质扩散层中的杂质浓度分布的劣化的问题。

公开(公告)号：US06537369B1

公开(公告)日：2003-03-25

申请号：US09979881

申请日：2001-11-27

申请人： Tohru Saitoh ,  Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Minoru Kubo

发明人： Tohru Saitoh ,  Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Minoru Kubo

IPC分类号： C30B2302

CPC分类号： H01L29/161 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T428/12674 ,  Y10T428/265

摘要： A B-doped Si1−x−yGexCy layer 102 (where 0

摘要翻译： 使用UHV-CVD工艺在Si衬底101上外延生长B掺杂的Si1-x-yGexCy层102（其中0