Low temperature method for metal deposition

Invention Grant

US07176081B2 Low temperature method for metal deposition 有权

Title translation: 金属沉积低温法

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Patent Title: Low temperature method for metal deposition
Patent Title (中): 金属沉积低温法
Application No.: US10851044

Application Date: 2004-05-20
Publication No.: US07176081B2

Publication Date: 2007-02-13
Inventor: Chih-Fu Chang , Yen-Hsiu Chen , Hung-Jen Lin , Ming-Chu King , Ching-Hwanq Su , Chih-Mu Huang , Yun Chang
Applicant: Chih-Fu Chang , Yen-Hsiu Chen , Hung-Jen Lin , Ming-Chu King , Ching-Hwanq Su , Chih-Mu Huang , Yun Chang
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Tung & Associates
Main IPC: H01L21/8242
IPC: H01L21/8242

Low temperature method for metal deposition

Abstract:

A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (Vbd) improvement.

Abstract(Chinese):

公开了一种适用于在金属 - 绝缘体 - 金属（MIM）电容器的制造中在基底上沉积金属膜的新颖的低温金属沉积方法。该方法包括使用小于一般约270℃的沉积温度在基板上沉积金属膜。所得到的金属膜的特征在于增强的厚度均匀性和减小的晶粒聚集，否则倾向于降低电容器或其它的操作完整性金属膜是其一部分的装置。此外，金属膜的特征在于本征击穿电压（V BAT）改善。

Public/Granted literature

US20050260811A1 Low temperature method for metal deposition Public/Granted day:2005-11-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）