中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US07176127B2 Method of manufacturing semiconductor device having through hole with adhesion layer thereon 失效
制造其上具有粘合层的通孔的半导体器件的制造方法

Method of manufacturing semiconductor device having through hole with adhesion layer thereon
Abstract:
An adhesion layer for causing a plug for electrically connecting a lower wiring and an upper wiring opposite to each other with an interlayer insulating film interposed therebetween to adhere to the interlayer insulating film is formed within a through hole for forming the plug, based on a predetermined aspect ratio represented by a ratio of a depth dimension of the through hole to a diameter dimension of the through hole.
Abstract(Chinese):

在用于形成插塞的通孔内，基于预定的粘合层形成用于使用于使下布线和彼此相对的上布线的插塞之间插入层间绝缘膜以粘附到层间绝缘膜的粘合层， 纵横比由通孔的深度尺寸与通孔的直径尺寸的比率表示。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
Patent Agency Ranking
0/0