Optical device, optical scanner, and image forming apparatus
    1.
    发明授权
    Optical device, optical scanner, and image forming apparatus 有权
    光学装置,光学扫描仪和图像形成装置

    公开(公告)号:US08610987B2

    公开(公告)日:2013-12-17

    申请号:US12695333

    申请日:2010-01-28

    IPC分类号: G02B26/08

    CPC分类号: G02B26/0833

    摘要: An optical device includes: an axis member including a plate-shaped attachment portion and an elastic support portion that swingably supports the attachment portion around a predetermined axis; a rigid member attached to one side of the attachment portion; and a light reflecting member attached to the other side of the attachment portion and having an area larger than that of the attachment portion.

    摘要翻译: 光学装置包括:轴构件,包括板形附接部分和弹性支撑部分,其围绕预定轴线可摆动地支撑安装部分; 附接到所述附接部分的一侧的刚性构件; 以及安装在所述安装部的另一侧并且具有比所述安装部的面积大的面积的光反射部件。

    Light deflecting element, light deflector, and image forming device
    2.
    发明授权
    Light deflecting element, light deflector, and image forming device 失效
    光偏转元件,光偏转器和图像形成装置

    公开(公告)号:US08553305B2

    公开(公告)日:2013-10-08

    申请号:US12880605

    申请日:2010-09-13

    IPC分类号: G02B26/08

    摘要: A light deflecting element includes: a movable plate provided with a light reflecting section having light reflectivity; a support section; a coupling section adapted to couple the movable plate rotatably to the support section; and a magnet disposed on an opposite surface of the movable plate to the light reflecting section, wherein the coupling section has a shape having a width gradually increasing in a direction from a side of the light reflecting section toward a side of the magnet in a cross-sectional view perpendicular to a rotational axis of the movable plate.

    摘要翻译: 光偏转元件包括:设置有具有光反射率的光反射部的可动板; 支持部分 耦合部分,其适于将可动板可旋转地联接到支撑部分; 以及设置在所述可动板的与所述光反射部相反的表面上的磁体,其中,所述耦合部具有沿着从所述光反射部分侧朝向所述磁体的一侧的方向在横向上逐渐增加的宽度的形状 与可动板的旋转轴线垂直的剖视图。

    Image forming apparatus
    3.
    发明授权
    Image forming apparatus 有权
    图像形成装置

    公开(公告)号:US08454173B2

    公开(公告)日:2013-06-04

    申请号:US12907428

    申请日:2010-10-19

    IPC分类号: G03B21/14

    摘要: An image forming apparatus includes: a first projector that scans light on a first display section to thereby display an image; a second projector that scans the light on a second display section, which is set in a position different from a position of the first display section, to thereby display an image; and a switching section that switches plural states including a first state in which the first projector displays the image on the first display section and a second state in which the second projector displays an image on the second display section.

    摘要翻译: 一种图像形成装置包括:第一投影仪,其对第一显示部分上的光进行扫描,从而显示图像; 第二投影仪,其在与第一显示部分的位置不同的位置上扫描第二显示部分上的光,从而显示图像; 以及切换部,切换包括第一投影仪在第一显示部显示图像的第一状态和第二投影仪在第二显示部上显示图像的第二状态的多个状态。

    Semiconductor device manufacturing method
    4.
    发明申请
    Semiconductor device manufacturing method 审中-公开
    半导体器件制造方法

    公开(公告)号:US20080188025A1

    公开(公告)日:2008-08-07

    申请号:US12000809

    申请日:2007-12-18

    申请人: Makiko Nakamura

    发明人: Makiko Nakamura

    IPC分类号: H01L21/56

    摘要: A movable structural body formed over a semiconductor substrate is covered with a sacrifice film. The sacrifice film is covered with a silicon oxide film. Further, through holes are defined in the silicon oxide film. The sacrifice film is removed through the through holes to form space between the movable structural body and the silicon oxide film. Aluminum or an aluminum alloy high in flowability is deposited over the silicon oxide film by a sputtering method to seal the through holes.

    摘要翻译: 形成在半导体衬底上的移动结构体被牺牲膜覆盖。 牺牲膜用氧化硅膜覆盖。 此外,在氧化硅膜中限定通孔。 通过通孔去除牺牲膜,以在可移动结构体和氧化硅膜之间形成空间。 通过溅射法在氧化硅膜上沉积高流动性的铝或铝合金以密封通孔。

    Method of manufacturing semiconductor device having through hole with adhesion layer thereon
    5.
    发明授权
    Method of manufacturing semiconductor device having through hole with adhesion layer thereon 失效
    制造其上具有粘合层的通孔的半导体器件的制造方法

    公开(公告)号:US07176127B2

    公开(公告)日:2007-02-13

    申请号:US11083311

    申请日:2005-03-18

    申请人: Makiko Nakamura

    发明人: Makiko Nakamura

    IPC分类号: H01L21/4763

    摘要: An adhesion layer for causing a plug for electrically connecting a lower wiring and an upper wiring opposite to each other with an interlayer insulating film interposed therebetween to adhere to the interlayer insulating film is formed within a through hole for forming the plug, based on a predetermined aspect ratio represented by a ratio of a depth dimension of the through hole to a diameter dimension of the through hole.

    摘要翻译: 在用于形成插塞的通孔内,基于预定的粘合层形成用于使用于使下布线和彼此相对的上布线的插塞之间插入层间绝缘膜以粘附到层间绝缘膜的粘合层, 纵横比由通孔的深度尺寸与通孔的直径尺寸的比率表示。

    Method of manufacturing semiconductor device
    6.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US06368959B1

    公开(公告)日:2002-04-09

    申请号:US09358367

    申请日:1999-07-21

    申请人: Makiko Nakamura

    发明人: Makiko Nakamura

    IPC分类号: H01L214763

    摘要: A first insulating film, a first wiring layer and a second insulating film are successively formed over a semiconductor substrate. A resist mask is patterned over the second insulating film, and isotropic etching and anisotropic etching are successively carried out to define a plurality of via holes within the second insulating film. The via holes thus have a first portion formed by the isotropic etching and a second portion formed by the anisotropic etching. The resist mask is removed, and a high melting-point metal film is formed over the second insulating film so as to be embedded in the plurality of via holes. The high melting-point metal film and the second insulating film are then polished down to the first portion of each of the via holes such that respective portions of the high melting-point metal film formed within adjacent ones of the plurality of via holes are isolated from each other. A second wiring layer is then formed so as to be electrically connected to the first wiring layer through the portions of the high melting-point metal film formed within the plurality of via holes.

    摘要翻译: 在半导体衬底上依次形成第一绝缘膜,第一布线层和第二绝缘膜。 在第二绝缘膜上图案化抗蚀剂掩模,并且连续执行各向同性蚀刻和各向异性蚀刻以在第二绝缘膜内限定多个通孔。 因此,通孔具有通过各向同性蚀刻形成的第一部分和通过各向异性蚀刻形成的第二部分。 去除抗蚀剂掩模,并且在第二绝缘膜上形成高熔点金属膜以嵌入多个通孔中。 然后将高熔点金属膜和第二绝缘膜抛光到每个通孔的第一部分,使得在多个通孔中相邻的通孔内形成的高熔点金属膜的各个部分被隔离 从彼此。 然后形成第二布线层,以便通过形成在多个通孔内的高熔点金属膜的部分与第一布线层电连接。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US6166442A

    公开(公告)日:2000-12-26

    申请号:US225352

    申请日:1999-01-05

    申请人: Makiko Nakamura

    发明人: Makiko Nakamura

    摘要: A semiconductor device is comprised of a first wire that has a plurality of via holes formed in the vicinity of an end thereof and that is connected to a conductor of a different layer through the via holes, and a plurality of slits that are provided parallel to the direction in which the first wire extends and that split the first wire into a plurality of second wires over a predetermined distance from the end thereof. Another semiconductor device is comprised of a first wire, a second wire that is on a layer different from that of the first wire and that extends in a direction at right angles to the first wire, a connection area where a portion in the vicinity of an end of the first wire intersects with a portion in the vicinity of an end of the second wire, a plurality of first slits that are provided parallel to the direction in which the first wire extends and that divide the first wire into a plurality of third wires over only a predetermined distance from an end of the first wire, and a plurality of second slits that are provided parallel to the direction in which the second wire extends and that divide the second wire into a plurality of fourth wires over only a predetermined distance from an end of the second wire, and a plurality of via holes that are formed in the connection area and that connect the plurality of third wires and the plurality of fourth wires.

    摘要翻译: 一种半导体器件由具有形成于其一端附近的多个通孔构成的第一导线构成,并且通过该贯通孔与不同层的导体连接,多个狭缝平行于 第一线延伸的方向,并且将第一线分解成多个第二线从其端部预定的距离。 另一个半导体器件包括第一线,第二线,其在不同于第一线的层上,并且在与第一线成直角的方向上延伸的第二线,连接区域,其中, 第一线的端部与第二线的端部附近的部分相交,多个第一狭缝,其与第一线延伸的方向平行设置,并且将第一线分成多个第三线 并且与第二线延伸的方向平行的多个第二狭缝,并且将第二线分成多条第四线,距离第一线的端部只有预定距离 第二线的端部,以及形成在连接区域中并连接多个第三线和多条第四线的多个通孔。

    Semiconductor device having a multi-layered conductive structure which
includes an aluminum alloy layer, a high melting temperature metal
layer, and a high melting temperature nitride layer
    8.
    发明授权
    Semiconductor device having a multi-layered conductive structure which includes an aluminum alloy layer, a high melting temperature metal layer, and a high melting temperature nitride layer 失效
    具有多层导电结构的半导体器件包括铝合金层,高熔点金属层和高熔点氮化物层

    公开(公告)号:US5646449A

    公开(公告)日:1997-07-08

    申请号:US504062

    申请日:1995-07-18

    摘要: A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as DC magnetron sputtering, RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers. If the same metal is used for the metal layer and the nitride layer, the same vacuum chamber may be used to apply both layers, by replacing an inert gas atmosphere used during metal layer deposition by a nitrogen gas atmosphere for use during the nitride layer deposition.

    摘要翻译: 具有多层金属化的半导体,其在铝合金和金属氮化物层之间具有金属层,防止当电迁移导致铝合金层不连续时互连的故障。 在一个实施例中,金属层的金属和氮化物层的金属都是相同的金属,例如钛。 在制造半导体器件的方法中,在半导体衬底的表面上形成绝缘层,在真空室中,在绝缘层上形成合金层,在合金层上形成金属层,金属层 在氮气气氛下在金属层上形成氮化物层。 可以使用诸如DC磁控溅射,RF偏置溅射或热蒸镀沉积的溅射来施加相应的氮化物,金属和合金层。 如果相同的金属用于金属层和氮化物层,则可以使用相同的真空室来施加两层,通过在氮化物层沉积期间用氮气气氛替换在金属层沉积期间使用的惰性气体气氛 。

    Actuator, optical scanner and image forming apparatus
    9.
    发明授权
    Actuator, optical scanner and image forming apparatus 失效
    执行器,光学扫描器和成像设备

    公开(公告)号:US08355191B2

    公开(公告)日:2013-01-15

    申请号:US11852107

    申请日:2007-09-07

    IPC分类号: G02B26/08

    摘要: An actuator includes a mass section; a support section; a coupling section for coupling the mass section rotatably to the support section so as to support the mass section with cantilever structure; and a pair of driving sources including a piezoelectric element for rotating the mass section, wherein the pair of driving sources are provided separately from each other with respect to a central axis of rotation of the mass section, each of the driving sources is provided slidably with respect to the coupling section or the support section, and the actuator is structured such that it causes the pair of piezoelectric elements to expand and contract in phases opposite to each other, so as to rotate at least a part of the coupling section while torsionally deforming the mass section.

    摘要翻译: 致动器包括质量部分; 支持部分 耦合部分,用于将质量部分可旋转地联接到支撑部分,以便以悬臂结构支撑质量部分; 以及一对驱动源,其包括用于旋转所述质量部的压电元件,其中,所述一对驱动源相对于所述质量部的中心轴线彼此分开设置,每个所述驱动源可滑动地设置 相对于联接部或支撑部,并且致动器被构造成使得它们使得该对压电元件彼此相对地膨胀和收缩,以便使扭转变形的联接部的至少一部分旋转 质量部分。

    Optical deflector and method of manufacturing the same
    10.
    发明授权
    Optical deflector and method of manufacturing the same 有权
    光偏转器及其制造方法

    公开(公告)号:US08331003B2

    公开(公告)日:2012-12-11

    申请号:US12403832

    申请日:2009-03-13

    IPC分类号: G02B26/08

    CPC分类号: B44C1/227 G02B26/085

    摘要: An optical deflector has: a movable plate having a reflecting surface and a side surface; and a support portion that supports the movable plate in such a manner that the movable plate is able to rotate around a predetermined axis, in which the side surface of the movable plate is recessed toward the axis.

    摘要翻译: 光学偏转器具有:具有反射面和侧面的可动板; 以及支撑部分,其以可移动板能够围绕可动板的侧表面朝向轴线凹陷的预定轴线旋转的方式支撑可动板。