Invention Grant
US07180160B2 MRAM storage device 有权
MRAM存储设备

MRAM storage device
Abstract:
A MRAM storage device comprises a substrate, on/above of which a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a plurality of isolation diodes are provided. Each memory cell forms a resistive cross point of one word line and one bit line, respectively. Each memory cell is connected to one isolation diode such that a unidirectional conductive path is formed from a word line to a bit line via the corresponding memory cell, respectively. The substrate, at least a part of the word lines or at least a part of the bit lines, and the isolation diodes are realized as one common monocrystal semiconductor block.
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