Invention Grant
- Patent Title: MRAM storage device
- Patent Title (中): MRAM存储设备
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Application No.: US10903722Application Date: 2004-07-30
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Publication No.: US07180160B2Publication Date: 2007-02-20
- Inventor: Richard Ferrant , Daniel Braun , Pascal Louis
- Applicant: Richard Ferrant , Daniel Braun , Pascal Louis
- Applicant Address: DE Munich FR Corbeil Essonnes Cedex
- Assignee: Infineon Technologies AG,Altis Semiconductor
- Current Assignee: Infineon Technologies AG,Altis Semiconductor
- Current Assignee Address: DE Munich FR Corbeil Essonnes Cedex
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
A MRAM storage device comprises a substrate, on/above of which a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a plurality of isolation diodes are provided. Each memory cell forms a resistive cross point of one word line and one bit line, respectively. Each memory cell is connected to one isolation diode such that a unidirectional conductive path is formed from a word line to a bit line via the corresponding memory cell, respectively. The substrate, at least a part of the word lines or at least a part of the bit lines, and the isolation diodes are realized as one common monocrystal semiconductor block.
Public/Granted literature
- US20060024886A1 MRAM storage device Public/Granted day:2006-02-02
Information query
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