公开(公告)号：US20060024886A1

公开(公告)日：2006-02-02

申请号：US10903722

申请日：2004-07-30

Applicant: Richard Ferrant ,  Daniel Braun ,  Pascal Louis

Inventor： Richard Ferrant ,  Daniel Braun ,  Pascal Louis

IPC: H01L21/336

CPC classification number: H01L27/224

Abstract: A MRAM storage device comprises a substrate, on/above of which a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a plurality of isolation diodes are provided. Each memory cell forms a resistive cross point of one word line and one bit line, respectively. Each memory cell is connected to one isolation diode such that a unidirectional conductive path is formed from a word line to a bit line via the corresponding memory cell, respectively. The substrate, at least a part of the word lines or at least a part of the bit lines, and the isolation diodes are realized as one common monocrystal semiconductor block.

Abstract translation: MRAM存储设备包括其上/其上提供有多个字线，多个位线，多个存储器单元和多个隔离二极管的衬底。 每个存储单元分别形成一个字线和一个位线的电阻交叉点。 每个存储单元连接到一个隔离二极管，使得单向导电路径分别通过对应的存储单元从字线形成到位线。 基板，字线的至少一部分或位线的至少一部分以及隔离二极管被实现为一个常见的单晶半导体块。

公开(公告)号：US07180160B2

公开(公告)日：2007-02-20

申请号：US10903722

申请日：2004-07-30

Applicant: Richard Ferrant ,  Daniel Braun ,  Pascal Louis

Inventor： Richard Ferrant ,  Daniel Braun ,  Pascal Louis

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L27/224

Abstract: A MRAM storage device comprises a substrate, on/above of which a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a plurality of isolation diodes are provided. Each memory cell forms a resistive cross point of one word line and one bit line, respectively. Each memory cell is connected to one isolation diode such that a unidirectional conductive path is formed from a word line to a bit line via the corresponding memory cell, respectively. The substrate, at least a part of the word lines or at least a part of the bit lines, and the isolation diodes are realized as one common monocrystal semiconductor block.

Abstract translation: MRAM存储设备包括其上/其上提供有多个字线，多个位线，多个存储器单元和多个隔离二极管的衬底。 每个存储单元分别形成一个字线和一个位线的电阻交叉点。 每个存储单元连接到一个隔离二极管，使得单向导电路径分别通过对应的存储单元从字线形成到位线。 基板，字线的至少一部分或位线的至少一部分以及隔离二极管被实现为一个常见的单晶半导体块。