发明授权
- 专利标题： Low dielectric materials and methods for making same
- 专利标题（中）： 低介电材料及其制造方法
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申请号： US10964499申请日： 2004-10-13
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公开(公告)号： US07186613B2公开(公告)日： 2007-03-06
- 发明人: John Francis Kirner , James Edward MacDougall , Brian Keith Peterson , Scott Jeffrey Weigel , Thomas Alan Deis , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
- 申请人： John Francis Kirner , James Edward MacDougall , Brian Keith Peterson , Scott Jeffrey Weigel , Thomas Alan Deis , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
- 申请人地址： US PA Allentown
- 专利权人： Air Products And Chemicals, Inc.
- 当前专利权人： Air Products And Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 代理商 Rosaleen P. Morris
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L29/94
摘要：
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.
公开/授权文献
- US20050116346A1 Low dielectric materials and methods for making same 公开/授权日：2005-06-02
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