公开(公告)号：US07307343B2

公开(公告)日：2007-12-11

申请号：US10158511

申请日：2002-05-30

申请人： John Francis Kirner ,  James Edward MacDougall ,  Brian Keith Peterson ,  Scott Jeffrey Weigel ,  Thomas Alan Deis ,  Martin Devenney ,  C. Eric Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： John Francis Kirner ,  James Edward MacDougall ,  Brian Keith Peterson ,  Scott Jeffrey Weigel ,  Thomas Alan Deis ,  Martin Devenney ,  C. Eric Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01L23/48

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249979

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

公开(公告)号：US07186613B2

公开(公告)日：2007-03-06

申请号：US10964499

申请日：2004-10-13

申请人： John Francis Kirner ,  James Edward MacDougall ,  Brian Keith Peterson ,  Scott Jeffrey Weigel ,  Thomas Alan Deis ,  Martin Devenney ,  C. Eric Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： John Francis Kirner ,  James Edward MacDougall ,  Brian Keith Peterson ,  Scott Jeffrey Weigel ,  Thomas Alan Deis ,  Martin Devenney ,  C. Eric Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01L21/8242 ,  H01L29/94

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249979

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 这些材料的特征在于具有约3.7或更小的介电常数（kappa）的介电常数; 来自材料的介电常数的部分归一化的壁弹性模量（E 0）为约15GPa或更大; 金属杂质含量为约500ppm以下。 还公开了低介电常数材料，其介电常数小于约1.95，并且部分源于材料的介电常数导出的归一化的壁弹性模量（E 0）大于约26 GPa。