利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.042 秒)

    Overcharge protection for electrochemical cells
    7.
    发明授权
    Overcharge protection for electrochemical cells 有权
    电化学电池过充保护

    公开(公告)号：US07785740B2

    公开(公告)日：2010-08-31

    申请号：US11097810

    申请日：2005-04-01

    申请人： Khalil Amine ,  Jun Liu ,  Krishnakumar Jambunathan ,  Brian Keith Peterson ,  Gennady Dantsin

    发明人： Khalil Amine ,  Jun Liu ,  Krishnakumar Jambunathan ,  Brian Keith Peterson ,  Gennady Dantsin

    IPC分类号： H01M10/056

    CPC分类号： H01M6/166 ,  H01M6/168 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/4235 ,  H01M2300/0025

    摘要： The invention relates to an improvement in a cell which is normally susceptible to damage from overcharging comprised of a negative electrode, a positive electrode, and an electrolyte comprised of an overcharge protection salt carried in a carrier or solvent. Representative overcharge protection salts are embraced by the formula: MaQ where M is an electrochemically stable cation selected from the group consisting of alkali metal, alkaline earth metal, tetraalkylammonium, or imidazolium groups, and Q is a borate or heteroborate cluster and a is the integer 1 or 2.

    摘要翻译： 本发明涉及电池的改进，该电池通常容易受到由负载电极，正电极和包含负载在载体或溶剂中的过充电保护盐构成的电解质的过充电的损害。 代表性的过充电保护盐包括下式：其中M是选自碱金属，碱土金属，四烷基铵或咪唑鎓基团的电化学稳定阳离子，Q是硼酸盐或异硼酸盐簇，a是整数 1或2。

    Low dielectric constant material and method of processing by CVD
    8.
    发明授权
    Low dielectric constant material and method of processing by CVD 有权
    低介电常数材料和通过CVD处理的方法

    公开(公告)号：US06716770B2

    公开(公告)日：2004-04-06

    申请号：US09863150

    申请日：2001-05-23

    申请人： Mark Leonard O'Neill ,  Brian Keith Peterson ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis

    发明人： Mark Leonard O'Neill ,  Brian Keith Peterson ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis

    IPC分类号： C23C1640

    CPC分类号： H01L21/02131 ,  C03C3/045 ,  C03C14/008 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L21/31633

    摘要： Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

    摘要翻译： 有机氟硅酸盐玻璃膜含有有机物质和无机氟，不含大量的碳氟化合物。 优选的膜由式SivOwCxHyFz表示，其中v + w + x + y + z = 100％，v为10至35原子％，w为10至65原子％，y为10至50原子％，x 为1〜30原子％，z为0.1〜15原子％，x / z任选大于0.25，基本上没有氟与碳键合。 CVD方法包括：（a）在真空室内提供衬底; （b）在真空室中引入气体试剂，其中包括提供供气的气体，供氧气体和至少一种选自有机硅烷和有机硅氧烷的前体气体; 和（c）向室中的气态试剂施加能量以诱导气态试剂的反应并在基底上形成膜。

    Mechanical enhancer additives for low dielectric films
    9.
    发明授权
    Mechanical enhancer additives for low dielectric films 有权
    用于低介电膜的机械增强剂添加剂

    公开(公告)号：US08137764B2

    公开(公告)日：2012-03-20

    申请号：US10842503

    申请日：2004-05-11

    申请人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    发明人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    IPC分类号： C23C10/06 ,  C23C16/24

    CPC分类号： C03C11/00 ,  C03C3/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

    摘要翻译： 本文公开了一种通过调节混合物内的有机基团如甲基的量来制备具有增强的机械性能的低介电常数有机硅酸盐（OSG）的化学气相沉积方法。 在本发明的一个实施方案中，OSG膜由包含第一含硅前体的混合物沉积，该第一含硅前体包含每Si原子3至4个Si-O键，0至1个选自Si -H，Si-Br和Si-Cl键，并且不具有Si-C键，并且每个Si原子包含至少一个Si-C键的第二含硅前体。 在本发明的另一个实施方案中，OSG膜由包含不对称含硅前体的混合物沉积。 在任一实施方案中，混合物还可含有孔原体前体以提供多孔OSG膜。