Invention Grant
US07205591B2 Pixel sensor cell having reduced pinning layer barrier potential and method thereof
有权
具有降低的钉扎层势垒势的像素传感器单元及其方法
- Patent Title: Pixel sensor cell having reduced pinning layer barrier potential and method thereof
- Patent Title (中): 具有降低的钉扎层势垒势的像素传感器单元及其方法
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Application No.: US10907570Application Date: 2005-04-06
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Publication No.: US07205591B2Publication Date: 2007-04-17
- Inventor: James W. Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey P. Gambino , Mark D. Jaffe , Jerome B Lasky , Richard A. Phelps
- Applicant: James W. Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey P. Gambino , Mark D. Jaffe , Jerome B Lasky , Richard A. Phelps
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Anthony J. Canale
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.
Public/Granted literature
- US20060226456A1 PIXEL SENSOR CELL HAVING REDUCED PINNING LAYER BARRIER POTENTIAL AND METHOD THEREOF Public/Granted day:2006-10-12
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